Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 μm Operating at Room Temperature

• Published in: Chinese physics letters Vol. 27; no. 3; pp. 312 - 315
• Main Author: 孔宁 刘俊岐 李路 刘峰奇 王利军 王占国
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.03.2010
• Subjects: InAlAs; InGaAs; 应变补偿; 操作室; 温度探测器; 量子级联
• ISSN: 0256-307X; 1741-3540
• DOI: 10.1088/0256-307X/27/3/038501

We present a strain-compensated InP-based InGaAs/InAlAs photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. The detector is based on a vertical intersubband transition and electron transfer on a cascade of quantum levels which is designed to provide longitudinal optical phonon extraction stairs. By careful structure design and growth, the whole epilayer has a residual strain toward InP substrate of only -2.8× 10^-4. A clear narrow band detection spectrum centered at 4.5 μm has been observed above room temperature for a device with 200／times 200 ×μm^2 square mesa.