The importance of holes in aluminium tris-8-hydroxyquinoline (Alq3) devices with Fe and NiFe contacts

To study the dominant charge carrier polarity in aluminium tris-8-hydroxyquinoline (Alq3) based spin valves, single Alq3 layer devices with NiFe, ITO, Fe, and aluminium electrodes were fabricated and characterised by Time of Flight (ToF) and Dark Injection (DI) techniques, yielding a lower hole mobi...

Full description

Saved in:
Bibliographic Details
Published inApplied physics letters Vol. 104; no. 1
Main Authors Zhang, Hongtao, Desai, P., Zhan, Y. Q., Drew, A. J., Gillin, W. P., Kreouzis, T.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 06.01.2014
Subjects
ALUMINIUM
Aluminum
Applied physics
CHARGE CARRIERS
Current carriers
Electrodes
ELECTRON MOBILITY
HOLE MOBILITY
Hydroxyquinoline
Intermetallic compounds
IRON
Iron compounds
MATERIALS SCIENCE
NICKEL
Nickel compounds
OXINE
Polarity
SPIN
Spin valves
TIME-OF-FLIGHT METHOD
Online AccessGet full text
ISSN0003-6951
1520-8842
1077-3118
1077-3118
DOI10.1063/1.4861120

Cover

More Information
Summary:To study the dominant charge carrier polarity in aluminium tris-8-hydroxyquinoline (Alq3) based spin valves, single Alq3 layer devices with NiFe, ITO, Fe, and aluminium electrodes were fabricated and characterised by Time of Flight (ToF) and Dark Injection (DI) techniques, yielding a lower hole mobility compared to electron mobility. We compare the mobility measured by DI for the dominant carrier injected from NiFe and Fe electrodes into Alq3, to that of holes measured by ToF. This comparison leads us to conclude that the dominant charge carriers in Alq3 based spin valves with NiFe or Fe electrodes are holes.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:0003-6951
1520-8842
1077-3118
1077-3118
DOI:10.1063/1.4861120