Preparation of BiFeO3 thin films by pulsed laser deposition method

• Published in: Transactions of Nonferrous Metals Society of China Vol. 16; no. B01; pp. 123 - 125
• Main Author: 张冠军 程晋荣 陈蕊 俞圣雯 孟中岩
• Format: Journal Article
• Language: English
• Published: School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China 01.06.2006
• Subjects: BiFeO3; 介电性质; 制备; 结构; 脉冲激光沉积法; 薄膜; BiFeO3 thin films; structural and dielectric properties; PLD; Pt/TiO2/SiO2/Si substrates
• ISSN: 1003-6326
• DOI: 10.1016/S1003-6326(06)60158-1

BiFeO3 （BFO） thin films were prepared on Pt（111）/TiO2/SiO2/Si（100） substrates by the pulsed-laser deposition （PLD） technique at a low temperature of 450℃. The XRD results indicate that the BFO thin films are of perovskite structure with the presence of small amount of second phases. The oxygen pressures have great effect on the crystalline structures and dielectric properties of BFO thin films. The dielectric constant of the BFO thin films decreases with increasing oxygen pressures, achieving 186, 171 and 160 at the frequency of 104 Hz for the oxygen pressures of 0.666, 1.333 and 13.332 Pa, respectively. The BFO thin films prepared at the oxygen pressure of 0.666 Pa reveal a saturated hysteresis loop with the remanent polarization of 7.5 ℃/cm^2 and the coercive field of 176 kV/cm.