A fast SOI-based variable optical attenuator with a p-i-n structure with low polarization dependent loss

According to the plasma dispersion effect of silicon（Si）,a silicon-on-insulator（SOI） based variable optical attenuator（VOA） with p-i-n lateral diode structure is demonstrated in this paper.A wire rib waveguide with sub-micrometer cross section is adopted.The device is only about 2 mm long.The power...

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Bibliographic Details
Published inOptoelectronics letters Vol. 12; no. 1; pp. 20 - 22
Main Author 袁配 吴远大 王玥 安俊明 胡雄伟
Format Journal Article
LanguageEnglish
Published Tianjin Tianjin University of Technology 2016
Subjects
Lasers
Optical Devices
Optics
p-i-n结构
Photonics
Physics
Physics and Astronomy
SOI
偏振相关损耗
光学衰减器
可变光衰减器
等离子色散效应
绝缘体上硅
载流子吸收
Optic Express
Arrayed Waveguide Grating
Transverse Electric
Dense Wavelength Division Multiplex
Measured Response Time
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ISSN1673-1905
1993-5013
DOI10.1007/s11801-016-5234-z

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Summary:According to the plasma dispersion effect of silicon（Si）,a silicon-on-insulator（SOI） based variable optical attenuator（VOA） with p-i-n lateral diode structure is demonstrated in this paper.A wire rib waveguide with sub-micrometer cross section is adopted.The device is only about 2 mm long.The power consumption of the VOA is 76.3 mW（0.67 V,113.9 mA）,and due to the carrier absorption,the polarization dependent loss（PDL） is 0.1dB at 20dB attenuation.The raise time of the VOA is 34.5 ns,the fall time is 37 ns,and the response time is 71.5 ns.
Bibliography:YUAN Pei , WU Yuan-da , WANG Yue , AN Jun-ming, and HU Xiong-wei （ 1. Henan Shi Jia Photons Technology Co., Ltd., Hebi 458030, China 2. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China）
12-1370/TN
According to the plasma dispersion effect of silicon（Si）,a silicon-on-insulator（SOI） based variable optical attenuator（VOA） with p-i-n lateral diode structure is demonstrated in this paper.A wire rib waveguide with sub-micrometer cross section is adopted.The device is only about 2 mm long.The power consumption of the VOA is 76.3 mW（0.67 V,113.9 mA）,and due to the carrier absorption,the polarization dependent loss（PDL） is 0.1dB at 20dB attenuation.The raise time of the VOA is 34.5 ns,the fall time is 37 ns,and the response time is 71.5 ns.
ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-016-5234-z