Enhancement of photoresponsive electrical characteristics of multilayer MoS2 transistors using rubrene patches

• Published in: Nano research Vol. 8; no. 3; pp. 790 - 800
• Main Authors: Cho, Eun Hei, Song, Won Geun, Park, Cheol Joon, Kim, Jeongyong, Kim, Sunkook, Joo, Jinsoo
• Format: Journal Article
• Language: English
• Published: Heidelberg Tsinghua University Press 01.03.2015
• Subjects: Atomic/Molecular Structure and Spectra; Biomedicine; Biotechnology; Chemistry and Materials Science; Condensed Matter Physics; Materials Science; Nanotechnology; Research Article; 二硫化钼; 光敏; 光物理性质; 光电晶体管; 有机半导体; 电子能带结构; 电气特性; 补丁; MoS; photoresponsivity; rubrene; transistor; charge transfer
• ISSN: 1998-0124; 1998-0000
• DOI: 10.1007/s12274-014-0561-5

Multilayer MoS2 is a promising active material for sensing, energy harvesting, and optoelectronic devices owing to its intriguing tunable electronic band structure. However, its optoelectronic applications have been limited due to its indirect band gap nature. In this study, we fabricated a new type of phototransistor using multilayer MoS2 crystal hybridized with p-type organic semiconducting rubrene patches. Owing to the outstanding photophysical properties of rubrene, the device characteristics such as charge mobility and photoresponsivity were considerably enhanced to an extent depending on the thickness of the rubrene patches. The enhanced photoresponsive conductance was analyzed in terms of the charge results of the nanoscale laser confocal time-resolved PL measurements. transfer doping effect, validated by the microscope photoluminescence （PL） and