Silicon micro-hemispheres with periodic nanoscale rings produced by the laser ablation of single crystalline silicon

We describe the fabrication of silicon micro-hemispheres by adopting the conventional laser ablation of single crystalline silicon in the vacuum condition without using any catalysts or additives. The highly oriented structures of silicon micro-hemispheres exhibit many periodic nanoscale rings along...

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Bibliographic Details
Published inChinese physics B Vol. 22; no. 10; pp. 375 - 380
Main Author 陈明 李爽 崔清强 刘向东
Format Journal Article
LanguageEnglish
Published 01.10.2013
Subjects
Additives
Cooling
Crystal structure
Deposition
Laser ablation
Lasers
Nanostructure
Silicon
半球
单晶硅
取向结构
周期性
激光烧蚀
真空条件
空气介质
纳米环
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/10/106101

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Summary:We describe the fabrication of silicon micro-hemispheres by adopting the conventional laser ablation of single crystalline silicon in the vacuum condition without using any catalysts or additives. The highly oriented structures of silicon micro-hemispheres exhibit many periodic nanoscale rings along their outer surfaces. We consider that the self-organized growth of silicon micro-structures is highly dependent on the laser intensity and background air medium. The difference between these surface modifications is attributed to the amount of laser energy deposited in the silicon material and the consequent cooling velocity.
Bibliography:We describe the fabrication of silicon micro-hemispheres by adopting the conventional laser ablation of single crystalline silicon in the vacuum condition without using any catalysts or additives. The highly oriented structures of silicon micro-hemispheres exhibit many periodic nanoscale rings along their outer surfaces. We consider that the self-organized growth of silicon micro-structures is highly dependent on the laser intensity and background air medium. The difference between these surface modifications is attributed to the amount of laser energy deposited in the silicon material and the consequent cooling velocity.
11-5639/O4
silicon micro-hemispheres, pulsed laser ablation
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/10/106101