Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers

The advantages of InGaN based light-emitting diodes with InGaN/GaN multilayer barriers are studied. It is found that the structure with InGaN/GaN multilayer barriers shows improved light output power, lower current leakage, and less efficiency droop over its conventional InGaN/GaN counterparts. Base...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 21; no. 11; pp. 528 - 532
Main Author 童金辉 李述体 卢太平 刘超 王海龙 仵乐娟 赵璧君 王幸福 陈鑫
Format Journal Article
LanguageEnglish
Published 01.11.2012
Subjects
Barriers
Computer simulation
Electrostatic fields
Gallium nitrides
Indium gallium nitrides
InGaN
Light-emitting diodes
Multilayers
Quantum wells
光学特性
光输出功率
多层结构
数值模拟
漏电流
蓝光发光二极管
量子阱
Online AccessGet full text
ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/11/118502

Cover

More Information
Summary:The advantages of InGaN based light-emitting diodes with InGaN/GaN multilayer barriers are studied. It is found that the structure with InGaN/GaN multilayer barriers shows improved light output power, lower current leakage, and less efficiency droop over its conventional InGaN/GaN counterparts. Based on the numerical simulation and analysis, these improvements on the electrical and the optical characteristics are mainly attributed to the alleviation of the electrostatic field in the quantum wells （QWs） when the InGaN/GaN multilayer barriers are used.
Bibliography:The advantages of InGaN based light-emitting diodes with InGaN/GaN multilayer barriers are studied. It is found that the structure with InGaN/GaN multilayer barriers shows improved light output power, lower current leakage, and less efficiency droop over its conventional InGaN/GaN counterparts. Based on the numerical simulation and analysis, these improvements on the electrical and the optical characteristics are mainly attributed to the alleviation of the electrostatic field in the quantum wells （QWs） when the InGaN/GaN multilayer barriers are used.
Tong Jin-Hui, Li Shu-Ti , Lu Tai-Ping Liu Chao, Wang Hai-Long, Wu Le-Juan, Zhao Bi-Jun, Wang Xing-Fu, and Chen Xin Institute of Opto-electronic Materials and Technology, South China Normal University, Cuangzhou 510631, China
GaN based light-emitting diode, InGaN/GaN multilayer barriers, electrostatic field
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/11/118502