Influence of Si doping on the structural and optical properties of InGaN epilayers
Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction （HRXRD）, photolumimescence （PL）, scanning electron microscope （SEM）, and atomic force microscopy （AFM）. It is found that the Si doping...
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| Published in | Chinese physics B Vol. 22; no. 10; pp. 449 - 452 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.10.2013
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/22/10/106803 |
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| Abstract | Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction （HRXRD）, photolumimescence （PL）, scanning electron microscope （SEM）, and atomic force microscopy （AFM）. It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing tile formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN. |
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| AbstractList | Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction （HRXRD）, photolumimescence （PL）, scanning electron microscope （SEM）, and atomic force microscopy （AFM）. It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing tile formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN. Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction (HRXRD), photolumimescence (PL), scanning electron microscope (SEM), and atomic force microscopy (AFM). It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing the formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN. |
| Author | 卢平元 马紫光 宿世臣 张力 陈弘 贾海强 江洋 钱卫宁 王耿 卢太平 何苗 |
| AuthorAffiliation | Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China Beijing National Laboratory of Condensed Matter, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China |
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| Cites_doi | 10.1002/pssc.200303557 10.1063/1.123837 10.1016/j.jcrysgro.2006.01.058 10.1063/1.119013 10.1063/1.3103559 10.1063/1.120853 10.1063/1.1846944 10.1063/1.1481786 10.1088/1674-1056/20/9/098503 10.1088/0256-307X/26/2/028101 10.1143/JJAP.38.3976 10.1016/S0038-1098(00)00410-5 10.1063/1.123471 10.1088/1674-1056/20/10/108504 10.1002/pssc.200565286 |
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| Notes | Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction （HRXRD）, photolumimescence （PL）, scanning electron microscope （SEM）, and atomic force microscopy （AFM）. It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing tile formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN. 11-5639/O4 Si doping, InGaN, V-shaped defect ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | 11 13 Nakamura S (12) 1991; 30 14 15 16 17 Lu T P (5) 2011; 20 2 3 Nakamura S (1) 1996; 35 Pei X J (6) 2009; 26 Kanie H (7) 2003; 0 Lu T P (4) 2011; 20 8 9 10 |
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| SubjectTerms | Atomic force microscopy Doping Emission Indium gallium nitrides InGaN Optical properties Retarding Scanning electron microscopy Silicon 光学性能 原子力显微镜 外延层 扫描电子显微镜 氮化铟镓 硅掺杂 结构 |
| Title | Influence of Si doping on the structural and optical properties of InGaN epilayers |
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