Influence of Si doping on the structural and optical properties of InGaN epilayers

Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction （HRXRD）, photolumimescence （PL）, scanning electron microscope （SEM）, and atomic force microscopy （AFM）. It is found that the Si doping...

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Bibliographic Details
Published inChinese physics B Vol. 22; no. 10; pp. 449 - 452
Main Author 卢平元 马紫光 宿世臣 张力 陈弘 贾海强 江洋 钱卫宁 王耿 卢太平 何苗
Format Journal Article
LanguageEnglish
Published 01.10.2013
Subjects
Atomic force microscopy
Doping
Emission
Indium gallium nitrides
InGaN
Optical properties
Retarding
Scanning electron microscopy
Silicon
光学性能
原子力显微镜
外延层
扫描电子显微镜
氮化铟镓
硅掺杂
结构
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/10/106803

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Summary:Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction （HRXRD）, photolumimescence （PL）, scanning electron microscope （SEM）, and atomic force microscopy （AFM）. It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing tile formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN.
Bibliography:Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction （HRXRD）, photolumimescence （PL）, scanning electron microscope （SEM）, and atomic force microscopy （AFM）. It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing tile formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN.
11-5639/O4
Si doping, InGaN, V-shaped defect
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SourceType-Scholarly Journals-1
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/10/106803