Three-dimensional Monte Carlo simulation of bulk fin field effect transistor
In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering...
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| Published in | Chinese physics B Vol. 21; no. 11; pp. 421 - 426 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.11.2012
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/21/11/117308 |
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| Abstract | In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage. |
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| AbstractList | In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage. In this paper, we investigate the performance of the bulk fin field effect transistor (FinFET) through a three-dimensional (3D) full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO sub(2) interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage. |
| Author | 王骏成 杜刚 魏康亮 张兴 刘晓彦 |
| AuthorAffiliation | Institute of Microeleetronics, Peking University, Beijing 100871, China |
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| CitedBy_id | crossref_primary_10_1016_j_microrel_2019_03_007 crossref_primary_10_1088_1674_4926_39_9_094011 crossref_primary_10_7498_aps_62_220704 |
| Cites_doi | 10.1103/PhysRevB.32.8171 10.1016/j.sse.2005.07.015 10.1088/1009-1963/15/1/028 10.1109/TED.2010.2052394 10.1088/1674-1056/19/5/057304 10.1109/TED.2011.2161479 10.1109/TDMR.2011.2168959 10.1109/TED.2005.856806 |
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| DocumentTitleAlternate | Three-dimensional Monte Carlo simulation of bulk fin field effect transistor |
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| Notes | Wang Jun-Cheng,Du Gang ,Wei Kang-Liang, Zhang Xing and Liu Xiao-Yan Institute of Microelectronics, Peking University, Beijing 100871, China bulk fin field effect transistor （FinFET）, three-dimensional （3D） Monte Carlo simulation,surface roughness scattering, substrate bias effect 11-5639/O4 In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage. ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | 12 13 Du G (23) 2010; 19 14 Park T (8) 2003 15 Choi Y K (2) 2001 Bin Y (3) 2002 Hisamoto D (1) 2000; 57 Chiarella T (7) 2009 Du G (18) 2010 Du G (16) 2006; 15 5 Xia Z L (22) 2006 Huang X (6) 1999 9 Hu C (4) 2011 Du G (19) 2004 Manoj C R (11) 2007 20 Pham A T (21) 2005 Okano K (10) 2005 Zhang W (17) 2009 |
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| Snippet | In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo... In this paper, we investigate the performance of the bulk fin field effect transistor (FinFET) through a three-dimensional (3D) full band Monte Carlo simulator... |
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| StartPage | 421 |
| SubjectTerms | Computer simulation Field effect transistors FinFET Monte Carlo methods Scattering Semiconductor devices Silicon substrates SiO2 Surface roughness Three dimensional 三维 散射机制 晶体管 模拟器 蒙特卡罗仿真 表面粗糙度 |
| Title | Three-dimensional Monte Carlo simulation of bulk fin field effect transistor |
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