Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering...

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Published inChinese physics B Vol. 21; no. 11; pp. 421 - 426
Main Author 王骏成 杜刚 魏康亮 张兴 刘晓彦
Format Journal Article
LanguageEnglish
Published 01.11.2012
Subjects
Computer simulation
Field effect transistors
FinFET
Monte Carlo methods
Scattering
Semiconductor devices
Silicon substrates
SiO2
Surface roughness
Three dimensional
三维
散射机制
晶体管
模拟器
蒙特卡罗仿真
表面粗糙度
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/11/117308

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Summary:In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.
Bibliography:Wang Jun-Cheng,Du Gang ,Wei Kang-Liang, Zhang Xing and Liu Xiao-Yan Institute of Microelectronics, Peking University, Beijing 100871, China
bulk fin field effect transistor （FinFET）, three-dimensional （3D） Monte Carlo simulation,surface roughness scattering, substrate bias effect
11-5639/O4
In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/11/117308