W-band high output power Schottky diode doublers with quartz substrate

W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schot- tky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the nonlinear junction. Passive networks of the circuit, such as the low pass filter, the...

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Bibliographic Details
Published inJournal of semiconductors Vol. 34; no. 12; pp. 77 - 81
Main Author 姚常飞 周明 罗运生 李姣 许从海
Format Journal Article
LanguageEnglish
Published 01.12.2013
Subjects
Circuits
Diodes
Exports
Low pass filters
Networks
Quartz
Schottky diodes
Semiconductors
W波段
倍增器
倍频电路
平面波导
无源网络
石英衬底
肖特基二极管
高输出功率
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/34/12/125004

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Summary:W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schot- tky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the nonlinear junction. Passive networks of the circuit, such as the low pass filter, the E-plane waveguide to strip transitions, input and output matching networks, and passive diode parts are analyzed by using electromagnetic simulators, and the different parts are then combined and optimized together. The exported S-parameters of the doubler circuit are used for multiply efficiency analysis. The highest measured output power is 29.5 mW at 80 GHz and higher than 15 mW in 76-94 GHz. The highest measured efficiency is 11.5% at 92.5 GHz, and the typical value is 6.0% in 70-100 GHz.
Bibliography:high output power; frequency doubler; planar Schottky diode; efficiency
W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schot- tky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the nonlinear junction. Passive networks of the circuit, such as the low pass filter, the E-plane waveguide to strip transitions, input and output matching networks, and passive diode parts are analyzed by using electromagnetic simulators, and the different parts are then combined and optimized together. The exported S-parameters of the doubler circuit are used for multiply efficiency analysis. The highest measured output power is 29.5 mW at 80 GHz and higher than 15 mW in 76-94 GHz. The highest measured efficiency is 11.5% at 92.5 GHz, and the typical value is 6.0% in 70-100 GHz.
11-5781/TN
Yao Changfei, Zhou Ming, Luo Yunsheng, Li Jiao, Xu Conghai（1 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China 2 Department of Microwave and Millimeter Wave Modules, Nanj ing Electronic Devices Institute, Nanjing 210016, China）
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ISSN:1674-4926
DOI:10.1088/1674-4926/34/12/125004