Plasmon-enhanced polymer bulk heterojunction solar cells with solution-processable Ag nanoparticles

We report the plasmon-enhanced polymer bulk-heterojunction solar cells with Ag nanoparticles (AgNPs) obtained via chemical method. Here, the AgNPs films with different particle densities are introduced between the poly (3,4-ethylene dioxythiophene) poly (styrenesulfonate) (PEDOT: PSS) buffer layer a...

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Published inOptoelectronics letters Vol. 7; no. 6; pp. 410 - 414
Main Author 闫齐齐 秦文静 王超 宋朋飞 丁国静 杨利营 印寿根
Format Journal Article
LanguageEnglish
Published Heidelberg Tianjin University of Technology 01.11.2011
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ISSN1673-1905
1993-5013
DOI10.1007/s11801-011-1059-y

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Summary:We report the plasmon-enhanced polymer bulk-heterojunction solar cells with Ag nanoparticles (AgNPs) obtained via chemical method. Here, the AgNPs films with different particle densities are introduced between the poly (3,4-ethylene dioxythiophene) poly (styrenesulfonate) (PEDOT: PSS) buffer layer and the poly (3-hexythiophene):[6,6]-phenyl-C61 butyric acid methyl ester (P3HT: PCBM) layer. By improving the optical absorption of the active layer owing to the localized surface plasmons, the power conversion efficiency of the solar cells is increased compared with the control device. It is shown that the efficiency of the device increases with the density of AgNPs. For the device employing higher density, the resulted power conversion efficiency is found to increase from 2.89% to 3.38%, enhanced by 16.96%.
Bibliography:We report the plasmon-enhanced polymer bulk-heterojunction solar cells with Ag nanoparticles (AgNPs) obtained via chemical method. Here, the AgNPs films with different particle densities are introduced between the poly (3,4-ethylene dioxythiophene) poly (styrenesulfonate) (PEDOT: PSS) buffer layer and the poly (3-hexythiophene):[6,6]-phenyl-C61 butyric acid methyl ester (P3HT: PCBM) layer. By improving the optical absorption of the active layer owing to the localized surface plasmons, the power conversion efficiency of the solar cells is increased compared with the control device. It is shown that the efficiency of the device increases with the density of AgNPs. For the device employing higher density, the resulted power conversion efficiency is found to increase from 2.89% to 3.38%, enhanced by 16.96%.
12-1370/TN
YAN Qi-qi, QIN Wen-jing , WANG Chao , SONG Peng-fei , DING Guo- jing, YANG Li-ying , YIN Shou-gen ( 1. Institute of Material Physics, Tianjin University of Technology, Tianjin 300384, China; 2. Key Laboratory of Display Material and Photoelectric Devices, Ministry of Education, Tianjin. University of Technology, Tianjin 300384, China)
ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-011-1059-y