Physical model for the exotic ultraviolet photo-conductivity of ZnO nanowire films

Employing a simple and efficient method of electro-chemical anodization, ZnO nanowire films are fabricated on Zn foil, and an ultraviolet （UV） sensor prototype is formed for investigating the electronic transport through back-to-back double junctions. The UV （365 nm） responses of surface-contacted Z...

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Published inChinese physics B Vol. 22; no. 11; pp. 634 - 639
Main Author 潘跃武 任守田 曲士良 王强
Format Journal Article
LanguageEnglish
Published 01.11.2013
Subjects
Anodizing
Electronics
Evolution
Foils
Nanowires
Transport
Ultraviolet
Zinc oxide
导电
情调
氧化锌纳米线
物理模型
电子输运
紫外线照射
线光
薄膜
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/11/118102

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Summary:Employing a simple and efficient method of electro-chemical anodization, ZnO nanowire films are fabricated on Zn foil, and an ultraviolet （UV） sensor prototype is formed for investigating the electronic transport through back-to-back double junctions. The UV （365 nm） responses of surface-contacted ZnO film are provided by I-V measurement, along with the current evolution process by on/off of UV illumination. In this paper, the back-to-back metal-seconductor-metal （M-S-M） model is used to explain the electronic transport of a ZnO nanowire film based structure. A thermionic-field electron emission mechanism is employed to fit and explain the as-observed UV sensitive electronic transport properties of ZnO film with surface-modulation by oxygen and water molecular coverage.
Bibliography:Pan Yue-Wu, Ren Shou-Tian, Qu Shi-Liang, Wang Qiang（a） Mathematics and Physical Sciences Technology, Xuzhou Institute of Technology, Xuzhou 221008, China b ） Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, China
Employing a simple and efficient method of electro-chemical anodization, ZnO nanowire films are fabricated on Zn foil, and an ultraviolet （UV） sensor prototype is formed for investigating the electronic transport through back-to-back double junctions. The UV （365 nm） responses of surface-contacted ZnO film are provided by I-V measurement, along with the current evolution process by on/off of UV illumination. In this paper, the back-to-back metal-seconductor-metal （M-S-M） model is used to explain the electronic transport of a ZnO nanowire film based structure. A thermionic-field electron emission mechanism is employed to fit and explain the as-observed UV sensitive electronic transport properties of ZnO film with surface-modulation by oxygen and water molecular coverage.
11-5639/O4
ZnO nanowires, metal-semiconductor-metal contact, water modulated surface barrier,thermionic-field electron emission
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/11/118102