High-voltage SOI lateral MOSFET with a dual vertical field plate

A new silicon-on-insulator （SOI） power lateral MOSFET with a dual vertical field plate （VFP） in the oxide trench is proposed. The dual VFP modulates the distribution of the electric field in the drift region, which enhances the internal field of the drift region and increases the drift doping concen...

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Bibliographic Details
Published inChinese physics B Vol. 22; no. 11; pp. 645 - 650
Main Author 范杰 张波 罗小蓉 李肇基
Format Journal Article
LanguageEnglish
Published 01.11.2013
Subjects
Breakdown
Devices
Drift
Electric potential
Electric power generation
MOSFET
MOSFETs
Oxides
SOI
VFP
Voltage
场板
垂直
漂移区
调制电场
高压
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/11/118502

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Summary:A new silicon-on-insulator （SOI） power lateral MOSFET with a dual vertical field plate （VFP） in the oxide trench is proposed. The dual VFP modulates the distribution of the electric field in the drift region, which enhances the internal field of the drift region and increases the drift doping concentration of the drift region, resulting in remarkable improvements in breakdown voltage （BV） and specific on-resistance （Ron,sp）. The mechanism of the VFP is analyzed and the characteristics of BV and Ron,sp are discussed. It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V, and the Ron,sp decreases from 366 mΩ·cm2 to 110 mΩ·cm2.
Bibliography:breakdown voltage, specific on-resistance, vertical field plate, oxide trench
Fan Jie, Zhang Bo, Luo Xiao-Rong, Li Zhao-Ji（ State Key Laboralory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China. Chengdu 610054, China）
11-5639/O4
A new silicon-on-insulator （SOI） power lateral MOSFET with a dual vertical field plate （VFP） in the oxide trench is proposed. The dual VFP modulates the distribution of the electric field in the drift region, which enhances the internal field of the drift region and increases the drift doping concentration of the drift region, resulting in remarkable improvements in breakdown voltage （BV） and specific on-resistance （Ron,sp）. The mechanism of the VFP is analyzed and the characteristics of BV and Ron,sp are discussed. It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V, and the Ron,sp decreases from 366 mΩ·cm2 to 110 mΩ·cm2.
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/11/118502