Effects of the ZnO buffer layer and Al proportion on AZO film properties
To evaluate the influence of the ZnO buffer layer and A1 proportion on the properties of ZnO： A1 （AZO）/ZnO bi-layer films, a series of AZO/ZnO films are deposited on the quartz substrates by electron beam evaporation. The X-ray diffraction measurement shows that the crystal quality of the films is i...
Saved in:
| Published in | Optoelectronics letters Vol. 8; no. 3; pp. 205 - 208 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
Heidelberg
Tianjin University of Technology
01.05.2012
|
| Subjects | |
| Online Access | Get full text |
| ISSN | 1673-1905 1993-5013 |
| DOI | 10.1007/s11801-012-1194-0 |
Cover
| Abstract | To evaluate the influence of the ZnO buffer layer and A1 proportion on the properties of ZnO： A1 （AZO）/ZnO bi-layer films, a series of AZO/ZnO films are deposited on the quartz substrates by electron beam evaporation. The X-ray diffraction measurement shows that the crystal quality of the films is improved with the increase of the film thickness. The electrical properties of the films are investigated. The carrier concentration and Hall mobility both increase with the increase of buffer layer thickness. However, the resistivity reaches the lowest at about 50 nm-thick buffer layer. The lowest resistivity and the maximum Hall mobility are both obtained at 1 wt% Al concentration. But the optical transmittance of all the films is greater than 80% regardless of the buffer layer thickness with A1 concentration lower than 5 wt% in the visible region. |
|---|---|
| AbstractList | To evaluate the influence of the ZnO buffer layer and A1 proportion on the properties of ZnO： A1 （AZO）/ZnO bi-layer films, a series of AZO/ZnO films are deposited on the quartz substrates by electron beam evaporation. The X-ray diffraction measurement shows that the crystal quality of the films is improved with the increase of the film thickness. The electrical properties of the films are investigated. The carrier concentration and Hall mobility both increase with the increase of buffer layer thickness. However, the resistivity reaches the lowest at about 50 nm-thick buffer layer. The lowest resistivity and the maximum Hall mobility are both obtained at 1 wt% Al concentration. But the optical transmittance of all the films is greater than 80% regardless of the buffer layer thickness with A1 concentration lower than 5 wt% in the visible region. To evaluate the influence of the ZnO buffer layer and Al proportion on the properties of ZnO: Al (AZO)/ZnO bi-layer films, a series of AZO/ZnO films are deposited on the quartz substrates by electron beam evaporation. The X-ray diffraction measurement shows that the crystal quality of the films is improved with the increase of the film thickness. The electrical properties of the films are investigated. The carrier concentration and Hall mobility both increase with the increase of buffer layer thickness. However, the resistivity reaches the lowest at about 50 nm-thick buffer layer. The lowest resistivity and the maximum Hall mobility are both obtained at 1 wt% Al concentration. But the optical transmittance of all the films is greater than 80% regardless of the buffer layer thickness with Al concentration lower than 5 wt% in the visible region. |
| Author | 隋成华 刘彬 徐天宁 鄢波 魏高尧 |
| AuthorAffiliation | Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China |
| Author_xml | – sequence: 1 fullname: 隋成华 刘彬 徐天宁 鄢波 魏高尧 |
| BookMark | eNp9kMFuAiEQhkljk1rrA_RGH2BbBlhZjsbY2sTES3vxQlgEXbOChfXg25etTQ89SCYw-ZNvfua_RwMfvEXoEcgzECJeEkBFoCBACwDJC3KDhiAlK0oCbJD7iWAFSFLeoXFKe5IPo6LicogWc-es6RIODnc7i9d-hetT1iJu9Tnf2m_wtMXHGI4hdk3wONd0vcKuaQ8_ss2yTQ_o1uk22fHvO0Kfr_OP2aJYrt7eZ9NlYRjwrqC8LK2pDBG0JrysKjDcUak1026yERNtmZA1NXUN1BBqJakYWADnGGdEEDZCcJlrYkgpWqeOsTnoeFZAVJ-GuqShchqqT0P1jPjHmKbT_TJd1E17laQXMmUXv7VR7cMp-rzgVejp124X_PYrc39_5CCqkpWMfQOjIn8X |
| CitedBy_id | crossref_primary_10_1063_1_4922152 |
| Cites_doi | 10.1016/j.spmi.2005.08.041 10.1016/S0169-4332(03)00005-9 10.1016/j.apsusc.2006.01.010 10.1116/1.1368836 10.1143/JJAP.35.L56 10.1016/S0169-4332(02)00011-9 10.1016/j.jcrysgro.2010.02.013 10.1002/adfm.201001342 10.1016/j.tsf.2010.07.048 10.1016/j.apsusc.2011.04.070 10.1063/1.3080204 10.1016/j.jpowsour.2011.08.011 10.1063/1.3064919 |
| ContentType | Journal Article |
| Copyright | Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2012 |
| Copyright_xml | – notice: Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2012 |
| DBID | 2RA 92L CQIGP W92 ~WA AAYXX CITATION |
| DOI | 10.1007/s11801-012-1194-0 |
| DatabaseName | 中文期刊服务平台 中文科技期刊数据库-CALIS站点 中文科技期刊数据库-7.0平台 中文科技期刊数据库-工程技术 中文科技期刊数据库- 镜像站点 CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Applied Sciences Physics |
| DocumentTitleAlternate | Effects of the ZnO buffer layer and Al proportion on AZO film properties |
| EISSN | 1993-5013 |
| EndPage | 208 |
| ExternalDocumentID | 10_1007_s11801_012_1194_0 41785353 |
| GroupedDBID | -5F -5G -BR -EM -Y2 -~C .VR 06D 0R~ 0VY 123 1N0 29N 29~ 2B. 2C0 2J2 2JN 2JY 2KG 2KM 2LR 2RA 2VQ 2~H 30V 4.4 406 408 40D 40E 5VR 5VS 6NX 8TC 92H 92I 92L 92R 93N 95- 95. 95~ 96X AAAVM AABHQ AAFGU AAHNG AAIAL AAJKR AANZL AARHV AARTL AATNV AATVU AAUYE AAWCG AAYFA AAYIU AAYQN AAYTO ABDZT ABECU ABFGW ABFTV ABHLI ABHQN ABJNI ABJOX ABKAS ABKCH ABMNI ABMQK ABNWP ABQBU ABSXP ABTEG ABTHY ABTKH ABTMW ABWNU ABXPI ACAOD ACBMV ACBRV ACBXY ACBYP ACGFS ACHSB ACHXU ACIGE ACIPQ ACKNC ACMDZ ACMLO ACOKC ACOMO ACSNA ACTTH ACVWB ACWMK ACZOJ ADHHG ADHIR ADINQ ADKNI ADKPE ADMDM ADOXG ADRFC ADTPH ADURQ ADYFF ADZKW AEBTG AEFTE AEGAL AEGNC AEJHL AEJRE AEKMD AEOHA AEPYU AESKC AESTI AETLH AEVLU AEVTX AEXYK AFGCZ AFLOW AFNRJ AFQWF AFUIB AFWTZ AFZKB AGAYW AGDGC AGGBP AGJBK AGMZJ AGQMX AGWIL AGWZB AGYKE AHAVH AHBYD AHKAY AHSBF AHYZX AIAKS AIIXL AILAN AIMYW AITGF AJBLW AJDOV AJRNO AKQUC ALMA_UNASSIGNED_HOLDINGS ALWAN AMKLP AMXSW AMYLF AMYQR AOCGG ARMRJ AXYYD B-. BA0 BDATZ BGNMA CAG CCEZO CHBEP COF CQIGP CS3 CSCUP CUBFJ CW9 DDRTE DNIVK DPUIP EBLON EBS EIOEI EJD ESBYG FA0 FERAY FFXSO FIGPU FINBP FNLPD FRRFC FSGXE FWDCC GGCAI GGRSB GJIRD GNWQR GQ6 GQ7 HF~ HG6 HLICF HMJXF HRMNR HZ~ IJ- IKXTQ IWAJR IXD I~X I~Z J-C JBSCW JUIAU JZLTJ KOV LLZTM M4Y MA- NPVJJ NQJWS NU0 O9- O9J P9T PF0 PT4 QOS R89 R9I ROL RPX RSV S16 S1Z S27 S3B SAP SCL SDH SHX SISQX SNE SNPRN SNX SOHCF SOJ SPH SPISZ SRMVM SSLCW STPWE SZN T13 TCJ TGT TSG TUC U2A UG4 UNUBA UOJIU UTJUX UZXMN VC2 VFIZW W92 WK8 YLTOR Z7R Z7X Z88 ZMTXR ~A9 ~WA -SI -S~ AACDK AAJBT AASML AAXDM AAYZH ABAKF ACDTI ACPIV AEFQL AEMSY AFBBN AGQEE AGRTI AIGIU CAJEI H13 Q-- SJYHP U1G U5S AAPKM AAYXX ABBRH ABDBE ABFSG ABRTQ ACSTC AEZWR AFDZB AFHIU AFOHR AHPBZ AHWEU AIXLP ATHPR AYFIA CITATION |
| ID | FETCH-LOGICAL-c314t-2455ec8c072b045881c4f29aa3af6d76ae379b2cbb12c02e90831e11ff3430703 |
| IEDL.DBID | U2A |
| ISSN | 1673-1905 |
| IngestDate | Thu Apr 24 22:58:47 EDT 2025 Wed Oct 01 02:51:46 EDT 2025 Fri Feb 21 02:37:01 EST 2025 Wed Feb 14 10:46:44 EST 2024 |
| IsPeerReviewed | false |
| IsScholarly | true |
| Issue | 3 |
| Keywords | Optical Transmittance Hall Mobility Carrier Concentration Deposition Time Buffer Layer |
| Language | English |
| License | http://www.springer.com/tdm |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c314t-2455ec8c072b045881c4f29aa3af6d76ae379b2cbb12c02e90831e11ff3430703 |
| Notes | 12-1370/TN To evaluate the influence of the ZnO buffer layer and A1 proportion on the properties of ZnO： A1 （AZO）/ZnO bi-layer films, a series of AZO/ZnO films are deposited on the quartz substrates by electron beam evaporation. The X-ray diffraction measurement shows that the crystal quality of the films is improved with the increase of the film thickness. The electrical properties of the films are investigated. The carrier concentration and Hall mobility both increase with the increase of buffer layer thickness. However, the resistivity reaches the lowest at about 50 nm-thick buffer layer. The lowest resistivity and the maximum Hall mobility are both obtained at 1 wt% Al concentration. But the optical transmittance of all the films is greater than 80% regardless of the buffer layer thickness with A1 concentration lower than 5 wt% in the visible region. SUl Cheng-hua , LIU Bin, XU Tian-ning, YAN Bo, WEI Gao-yao （ Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China） |
| PageCount | 4 |
| ParticipantIDs | crossref_primary_10_1007_s11801_012_1194_0 crossref_citationtrail_10_1007_s11801_012_1194_0 springer_journals_10_1007_s11801_012_1194_0 chongqing_primary_41785353 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2012-05-01 |
| PublicationDateYYYYMMDD | 2012-05-01 |
| PublicationDate_xml | – month: 05 year: 2012 text: 2012-05-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationPlace | Heidelberg |
| PublicationPlace_xml | – name: Heidelberg |
| PublicationTitle | Optoelectronics letters |
| PublicationTitleAbbrev | Optoelectron. Lett |
| PublicationTitleAlternate | Opto-electronics Letters |
| PublicationYear | 2012 |
| Publisher | Tianjin University of Technology |
| Publisher_xml | – name: Tianjin University of Technology |
| References | JungM. N.KooJ. E.OhS. J.LeeB.W.LeeW. J.HaS. H.ChoY. R.ChangJ. H.Appl. Phys. Lett.2009940419062009ApPhL..94d1906J10.1063/1.3064919 ShinS. W.SimK. U.PawarS. M.MoholkarA. V.JungI. O.YunJ. H.MoonJ. H.KimJ. H.LeeJ. Y.J. Cryst. Growth201031215512010JCrGr.312.1551S10.1016/j.jcrysgro.2010.02.013 ManouniA. E.ManjónF. J.MollarM.MaríB.GómezR.LópezM. C.Ramos-BarradoJ. R.Superlattices. Microstruct2006398510.1016/j.spmi.2005.08.041 ZhaoS. Q.ZhouY. L.LiuY. Z.ZhaoK.WangS. F.XiangW. F.LiuZ.HanP.ZhangZ.ChenZ. H.Appl. Surf. Sci.20062537262006ApSS..253..726Z10.1016/j.apsusc.2006.01.010 LiuH. F.WangZ. H.J. Optoelectron. Laser201122400 YangZ.LookD. C.LiuJ. L.Appl. Phys. Lett.2009940721012009ApPhL..94g2101Y10.1063/1.3080204 ZhangZ. Y.BaoC. G.MaS. Q.HouS. Z.Appl. Surf. Sci.201125778932011ApSS..257.7893Z10.1016/j.apsusc.2011.04.070 BangK. H.HwangD. K.MyoungJ. M.Appl. Surf. Sci.20032073592003ApSS..207..359B10.1016/S0169-4332(03)00005-9 LeeD. J.KimH. M.KwonJ. Y.ChoiH.KimS. H.KimK. B.Adv. Funct. Mater.20112144810.1002/adfm.201001342 LuoL. J.TaoW.HuX. Y.XiaoT.HengB. J.HuangW.WangH.HanH. W.JiangQ. K.WangJ. B.TangY. W.J. Power Sources20111961051810.1016/j.jpowsour.2011.08.011 ChenM.PeiZ. L.SunC.WenS.J. Vac. Sci. Technol.2001199632001JVST...19..963C10.1116/1.1368836 SuzukiA.MatsushitaT.WadaN.SakamotoY.OkudaM.J. Appl. Phys.199635L561996JaJAP..35L..56S10.1143/JJAP.35.L56 SuarezH. M.MaldonadoA.OlveraM. D. L.ReyesA.PerezR. C.DelgadoG. T.AsomozaR.Appl. Surf. Sci.20021935210.1016/S0169-4332(02)00011-9 LiL. N.ChenX. L.LiuC.SunJ.GengX. H.ZhaoY.J. Optoelectron. Laser20102155910.1007/s00340-010-4022-x YangW. F.WuZ. Y.LiuZ. G.PangA. S.TuY. L.FengZ. C.Thin Solid Films2010519312010TSF...519...31Y10.1016/j.tsf.2010.07.048 H. F. Liu (1194_CR4) 2011; 22 S. W. Shin (1194_CR14) 2010; 312 Z. Y. Zhang (1194_CR15) 2011; 257 S. Q. Zhao (1194_CR1) 2006; 253 W. F. Yang (1194_CR11) 2010; 519 A. E. Manouni (1194_CR7) 2006; 39 A. Suzuki (1194_CR9) 1996; 35 M. Chen (1194_CR10) 2001; 19 L. N. Li (1194_CR5) 2010; 21 L. J. Luo (1194_CR6) 2011; 196 H. M. Suarez (1194_CR8) 2002; 193 D. J. Lee (1194_CR12) 2011; 21 K. H. Bang (1194_CR13) 2003; 207 Z. Yang (1194_CR2) 2009; 94 M. N. Jung (1194_CR3) 2009; 94 |
| References_xml | – reference: YangZ.LookD. C.LiuJ. L.Appl. Phys. Lett.2009940721012009ApPhL..94g2101Y10.1063/1.3080204 – reference: BangK. H.HwangD. K.MyoungJ. M.Appl. Surf. Sci.20032073592003ApSS..207..359B10.1016/S0169-4332(03)00005-9 – reference: SuarezH. M.MaldonadoA.OlveraM. D. L.ReyesA.PerezR. C.DelgadoG. T.AsomozaR.Appl. Surf. Sci.20021935210.1016/S0169-4332(02)00011-9 – reference: ManouniA. E.ManjónF. J.MollarM.MaríB.GómezR.LópezM. C.Ramos-BarradoJ. R.Superlattices. Microstruct2006398510.1016/j.spmi.2005.08.041 – reference: ChenM.PeiZ. L.SunC.WenS.J. Vac. Sci. Technol.2001199632001JVST...19..963C10.1116/1.1368836 – reference: ZhangZ. Y.BaoC. G.MaS. Q.HouS. Z.Appl. Surf. Sci.201125778932011ApSS..257.7893Z10.1016/j.apsusc.2011.04.070 – reference: LiL. N.ChenX. L.LiuC.SunJ.GengX. H.ZhaoY.J. Optoelectron. Laser20102155910.1007/s00340-010-4022-x – reference: JungM. N.KooJ. E.OhS. J.LeeB.W.LeeW. J.HaS. H.ChoY. R.ChangJ. H.Appl. Phys. Lett.2009940419062009ApPhL..94d1906J10.1063/1.3064919 – reference: LiuH. F.WangZ. H.J. Optoelectron. Laser201122400 – reference: ZhaoS. Q.ZhouY. L.LiuY. Z.ZhaoK.WangS. F.XiangW. F.LiuZ.HanP.ZhangZ.ChenZ. H.Appl. Surf. Sci.20062537262006ApSS..253..726Z10.1016/j.apsusc.2006.01.010 – reference: ShinS. W.SimK. U.PawarS. M.MoholkarA. V.JungI. O.YunJ. H.MoonJ. H.KimJ. H.LeeJ. Y.J. Cryst. Growth201031215512010JCrGr.312.1551S10.1016/j.jcrysgro.2010.02.013 – reference: SuzukiA.MatsushitaT.WadaN.SakamotoY.OkudaM.J. Appl. Phys.199635L561996JaJAP..35L..56S10.1143/JJAP.35.L56 – reference: LuoL. J.TaoW.HuX. Y.XiaoT.HengB. J.HuangW.WangH.HanH. W.JiangQ. K.WangJ. B.TangY. W.J. Power Sources20111961051810.1016/j.jpowsour.2011.08.011 – reference: YangW. F.WuZ. Y.LiuZ. G.PangA. S.TuY. L.FengZ. C.Thin Solid Films2010519312010TSF...519...31Y10.1016/j.tsf.2010.07.048 – reference: LeeD. J.KimH. M.KwonJ. Y.ChoiH.KimS. H.KimK. B.Adv. Funct. Mater.20112144810.1002/adfm.201001342 – volume: 39 start-page: 85 year: 2006 ident: 1194_CR7 publication-title: Superlattices. Microstruct doi: 10.1016/j.spmi.2005.08.041 – volume: 207 start-page: 359 year: 2003 ident: 1194_CR13 publication-title: Appl. Surf. Sci. doi: 10.1016/S0169-4332(03)00005-9 – volume: 253 start-page: 726 year: 2006 ident: 1194_CR1 publication-title: Appl. Surf. Sci. doi: 10.1016/j.apsusc.2006.01.010 – volume: 19 start-page: 963 year: 2001 ident: 1194_CR10 publication-title: J. Vac. Sci. Technol. doi: 10.1116/1.1368836 – volume: 35 start-page: L56 year: 1996 ident: 1194_CR9 publication-title: J. Appl. Phys. doi: 10.1143/JJAP.35.L56 – volume: 193 start-page: 52 year: 2002 ident: 1194_CR8 publication-title: Appl. Surf. Sci. doi: 10.1016/S0169-4332(02)00011-9 – volume: 312 start-page: 1551 year: 2010 ident: 1194_CR14 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2010.02.013 – volume: 21 start-page: 448 year: 2011 ident: 1194_CR12 publication-title: Adv. Funct. Mater. doi: 10.1002/adfm.201001342 – volume: 519 start-page: 31 year: 2010 ident: 1194_CR11 publication-title: Thin Solid Films doi: 10.1016/j.tsf.2010.07.048 – volume: 257 start-page: 7893 year: 2011 ident: 1194_CR15 publication-title: Appl. Surf. Sci. doi: 10.1016/j.apsusc.2011.04.070 – volume: 21 start-page: 559 year: 2010 ident: 1194_CR5 publication-title: J. Optoelectron. Laser – volume: 94 start-page: 072101 year: 2009 ident: 1194_CR2 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3080204 – volume: 196 start-page: 10518 year: 2011 ident: 1194_CR6 publication-title: J. Power Sources doi: 10.1016/j.jpowsour.2011.08.011 – volume: 94 start-page: 041906 year: 2009 ident: 1194_CR3 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3064919 – volume: 22 start-page: 400 year: 2011 ident: 1194_CR4 publication-title: J. Optoelectron. Laser |
| SSID | ssj0000327849 |
| Score | 1.8787544 |
| Snippet | To evaluate the influence of the ZnO buffer layer and A1 proportion on the properties of ZnO： A1 （AZO）/ZnO bi-layer films, a series of AZO/ZnO films are... To evaluate the influence of the ZnO buffer layer and Al proportion on the properties of ZnO: Al (AZO)/ZnO bi-layer films, a series of AZO/ZnO films are... |
| SourceID | crossref springer chongqing |
| SourceType | Enrichment Source Index Database Publisher |
| StartPage | 205 |
| SubjectTerms | AZO Lasers Optical Devices Optics Photonics Physics Physics and Astronomy X射线衍射测量 ZnO缓冲层 比例 薄膜性能 载流子浓度 铝浓度 霍尔迁移率 |
| Title | Effects of the ZnO buffer layer and Al proportion on AZO film properties |
| URI | http://lib.cqvip.com/qk/88368X/201203/41785353.html https://link.springer.com/article/10.1007/s11801-012-1194-0 |
| Volume | 8 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| journalDatabaseRights | – providerCode: PRVLSH databaseName: SpringerLink Journals customDbUrl: mediaType: online eissn: 1993-5013 dateEnd: 99991231 omitProxy: false ssIdentifier: ssj0000327849 issn: 1673-1905 databaseCode: AFBBN dateStart: 20050701 isFulltext: true providerName: Library Specific Holdings – providerCode: PRVAVX databaseName: SpringerLINK - Czech Republic Consortium customDbUrl: eissn: 1993-5013 dateEnd: 99991231 omitProxy: false ssIdentifier: ssj0000327849 issn: 1673-1905 databaseCode: AGYKE dateStart: 20050101 isFulltext: true titleUrlDefault: http://link.springer.com providerName: Springer Nature – providerCode: PRVAVX databaseName: SpringerLink Journals (ICM) customDbUrl: eissn: 1993-5013 dateEnd: 99991231 omitProxy: true ssIdentifier: ssj0000327849 issn: 1673-1905 databaseCode: U2A dateStart: 20050701 isFulltext: true titleUrlDefault: http://www.springerlink.com/journals/ providerName: Springer Nature |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV3dS8MwED90Q_DFj6m4qSMPPimFfHVZH4tsDkX34mDupaRpqkLt5rr9_yZZuzFQwdK-lGsKd5fcJXf3O4BrsygmQgfMMw_3OEuwF9tCXUFSkTKpuwG11chPz53BiD-M_XFZx11U2e5VSNKt1JtiN9J1W1_qEWLxbHeh7ls0L6PEIxquD1Yws7E06_aSjmCeMXh-Fc38aRSLqfA-zd--zB-3bdN2YNTZm_4RHJSOIgpXkj2GHZ034LB0GlE5JYsG7LkcTlWcwGCFRFygaYqMW4cm-RDFS9v_BGXSeNZI5gkKMzSzjRHmViDI3OFkiNKP7NO9tknWujiFUb_3cjfwykYJnmKELzzKfV-rrsKCxq70lCie0kBKJlMjio7UTAQxVXFMqMJUB7a9mCYkTRl3c_4Mavk01-eAEiwSpQIcdGPOKe4Evtl6J4k0lxZYyCa01uyKZitAjIgTYay-z5qAK_5FqoQYt50usmgDjmzZHxn2R5b9EW7CzfqTarg_iG8roUTlVCt-p279i_oC9qnVCpfLeAm1xXypr4y_sYjbUA_vXx97badn3xJsycM |
| linkProvider | Springer Nature |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT8MwDLZ4CMGFN2I8c-AEqpRXl_U4IdB4X5g07RKlaQpIoxvr9v-Js3YICZCo2kvlppIdx05sfwY484tiplwiIv_ISIqMRikW6iqWq1wY10o4ViM_PDY7XXnbi3tVHXdZZ7vXIcmwUn8Vu7FW2PryiDHEs12EZcSvQsD8Lm_PD1aowFgaur2sqUTkDV5cRzN_GgUxFV6HxcuH_-N32_Q9MBrszfUmrFeOImnPJLsFC67Yho3KaSSVSpbbsBJyOG25A50ZEnFJhjnxbh3pF08knWL_EzIw3rMmpshIe0BG2BhhjAIh_m73n0j-NngPrzHJ2pW70L2-er7sRFWjhMgKJicRl3HsbMtSxdNQesqszHlijDC5F0XTOKGSlNs0ZdxS7hJsL-YYy3Mhg87vwVIxLNw-kIyqzNqEJq1USk6bSey33llm_OUUVaYBB3N26dEMEENLprzVj0UDaM0_bSuIcex0MdBf4MjIfu3Zr5H9mjbgfP5JPdwfxBe1UHSlauXv1Af_oj6F1c7zw72-v3m8O4Q1jjMk5DUewdJkPHXH3veYpCdhrn0CUqvLGw |
| linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT8MwDLZ4CMSFN2I8c-AEqsiry3qcgGm8OTAJcYnSNAGk0Q06_j9x1w4hARJVe6ncVLKd5kttfwY4CB_FTLlEROGSkRQZjVIs1FXMKy-MayUcq5Gvb5rdnrx4iB-qPqdFne1ehyTHNQ3I0pSPjoeZP_4qfGOtchvMI8aQ23YaZiXyJASH7vH25CcLFRhXQwjMmkpEYfGL68jmT6Mgv8LzIH96C2__vk59D5KWa09nGRYr0EjaYyuvwJTLV2GpApCkmp7FKsyV-Zy2WIPumJW4IANPAsQjj_ktST-wFwrpm4Cyickz0u6TITZJeEfjkHC2H2-Jf-m_lrcx4doV69DrnN2fdKOqaUJkBZOjiMs4drZlqeJpWYbKrPQ8MUYYH8zSNE6oJOU2TRm3lLsEW405xrwXspz_GzCTD3K3CSSjKrM2oUkrlZLTZhKHbXiWmXA4RZVpwNZEXXo4JsfQkqmAAGLRAFrrT9uKbhy7XvT1F1Eyql8H9WtUv6YNOJw8Ug_3h_BRbRRdTbvid-mtf0nvw_zdaUdfnd9cbsMCRwcpUxx3YGb0_uF2AwwZpXulq30Ce1fPVw |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Effects+of+the+ZnO+buffer+layer+and+Al+proportion+on+AZO+film+properties&rft.jtitle=Optoelectronics+letters&rft.au=Sui%2C+Cheng-hua&rft.au=Liu%2C+Bin&rft.au=Xu%2C+Tian-ning&rft.au=Yan%2C+Bo&rft.date=2012-05-01&rft.pub=Tianjin+University+of+Technology&rft.issn=1673-1905&rft.eissn=1993-5013&rft.volume=8&rft.issue=3&rft.spage=205&rft.epage=208&rft_id=info:doi/10.1007%2Fs11801-012-1194-0&rft.externalDocID=10_1007_s11801_012_1194_0 |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F88368X%2F88368X.jpg |