Effects of the ZnO buffer layer and Al proportion on AZO film properties

To evaluate the influence of the ZnO buffer layer and A1 proportion on the properties of ZnO： A1 （AZO）/ZnO bi-layer films, a series of AZO/ZnO films are deposited on the quartz substrates by electron beam evaporation. The X-ray diffraction measurement shows that the crystal quality of the films is i...

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Published inOptoelectronics letters Vol. 8; no. 3; pp. 205 - 208
Main Author 隋成华 刘彬 徐天宁 鄢波 魏高尧
Format Journal Article
LanguageEnglish
Published Heidelberg Tianjin University of Technology 01.05.2012
Subjects
AZO
Lasers
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
X射线衍射测量
ZnO缓冲层
比例
薄膜性能
载流子浓度
铝浓度
霍尔迁移率
Optical Transmittance
Hall Mobility
Carrier Concentration
Deposition Time
Buffer Layer
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ISSN1673-1905
1993-5013
DOI10.1007/s11801-012-1194-0

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Summary:To evaluate the influence of the ZnO buffer layer and A1 proportion on the properties of ZnO： A1 （AZO）/ZnO bi-layer films, a series of AZO/ZnO films are deposited on the quartz substrates by electron beam evaporation. The X-ray diffraction measurement shows that the crystal quality of the films is improved with the increase of the film thickness. The electrical properties of the films are investigated. The carrier concentration and Hall mobility both increase with the increase of buffer layer thickness. However, the resistivity reaches the lowest at about 50 nm-thick buffer layer. The lowest resistivity and the maximum Hall mobility are both obtained at 1 wt% Al concentration. But the optical transmittance of all the films is greater than 80% regardless of the buffer layer thickness with A1 concentration lower than 5 wt% in the visible region.
Bibliography:12-1370/TN
To evaluate the influence of the ZnO buffer layer and A1 proportion on the properties of ZnO： A1 （AZO）/ZnO bi-layer films, a series of AZO/ZnO films are deposited on the quartz substrates by electron beam evaporation. The X-ray diffraction measurement shows that the crystal quality of the films is improved with the increase of the film thickness. The electrical properties of the films are investigated. The carrier concentration and Hall mobility both increase with the increase of buffer layer thickness. However, the resistivity reaches the lowest at about 50 nm-thick buffer layer. The lowest resistivity and the maximum Hall mobility are both obtained at 1 wt% Al concentration. But the optical transmittance of all the films is greater than 80% regardless of the buffer layer thickness with A1 concentration lower than 5 wt% in the visible region.
SUl Cheng-hua , LIU Bin, XU Tian-ning, YAN Bo, WEI Gao-yao （ Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China）
ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-012-1194-0