A 80-MHz-to-410-MHz 16-Phases DLL Based on Improved Dead-Zone Open-Loop Phase Detector and Reduced-Gain Charge Pump

In this paper, a low jitter 16-phases delay locked loop (DLL) is proposed based on a simple and sensitive phase detector (PD). Dead-zone of the proposed PD is improved in compare to the conventional structures where the pulse generator postpones PD response and reduces the sensitivity. Also, the con...

Full description

Saved in:
Bibliographic Details
Published inJournal of circuits, systems, and computers Vol. 24; no. 1; p. 1550001
Main Authors Kazeminia, Sarang, Mowloodi, Sobhan Sofi, Hadidi, Khayrollah
Format Journal Article
LanguageEnglish
Published Singapore World Scientific Publishing Company 01.01.2015
World Scientific Publishing Co. Pte., Ltd
Subjects
Online AccessGet full text
ISSN0218-1266
1793-6454
DOI10.1142/S0218126615500012

Cover

More Information
Summary:In this paper, a low jitter 16-phases delay locked loop (DLL) is proposed based on a simple and sensitive phase detector (PD). Dead-zone of the proposed PD is improved in compare to the conventional structures where the pulse generator postpones PD response and reduces the sensitivity. Also, the conventional structure of charge pumps is modified to inject small charge throughout the continuous outputs of PD. Smaller bias current is provided in charge pump via subtracting tail currents of intentionally mismatched differential pairs. Duty cycle of output differential phases is adjusted to around 50% using common mode setting strategy on delay elements. Simulation results confirm that DLL loop can provide 16-phases in frequency range of 80 to 410 MHz, consuming total power of 3.5 and 5.6 mW, respectively. The dead-zone of PD is also reduced from 80 to 14 ps when the pulse generator section is eliminated. Also, RMS jitter of about 45 and 1.76 ps are obtained at 80 and 410 MHz, respectively, when the supply voltage is subject to around 40 mV peak-to-peak noise disturbances. The proposed DLL can be implemented in less than 0.05 mm2 active area in a 0.18 μm CMOS technology.
Bibliography:This paper was recommended by Regional Editor Piero Malcovati.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:0218-1266
1793-6454
DOI:10.1142/S0218126615500012