Field emission properties of a-C and a-C：H films deposited on silicon surfaces modified with nickel nanoparticles

• Published in: Chinese physics B Vol. 25; no. 4; pp. 398 - 402
• Main Author: 姜金龙 王玉宝 王琼 黄浩 魏智强 郝俊英
• Format: Journal Article
• Language: English
• Published: 01.04.2016
• Subjects: Carbon; Current density; Electric fields; Field emission; Morphology; Nanoparticles; Nickel; Silicon; 交流; 原子力显微镜分析; 发射电流密度; 场发射特性; 硅表面; 薄膜沉积; 表面改性; 镍纳米粒子
• ISSN: 1674-1056; 2058-3834; 1741-4199
• DOI: 10.1088/1674-1056/25/4/048101

The a-C and a-C：H films are deposited on silicon surfaces modified with and without nickel nanoparticles by using mid-frequency magnetron sputtering. The microstructures and morphologies of the films are analyzed by Raman spec- troscopy and atomic force microscopy. Field emission behaviors of the deposited films with and without nickel nanopar- ticles modification are comparatively investigated. It is found that the hydrogen-free carbon film exhibits a high field emission current density and low turn-on electric field compared with the hydrogenated carbon film. Nickel modifying could increase the current density, whereas it has no significant effect on the turn-on electric field. The mechanism of field electron emission of a sample is discussed from the surface morphologies of the films and nickel nanoparticle roles in the interface between film and substrate.