Factors Affecting the Top Stripping of GaAs Microwire Array Fabricated by Inductively Coupled Plasma Etching

The effects of different masks and patterns on the top stripping of GaAs microwire arrays fabricated by inductively coupled plasma etching for 20min and 40min are investigated. The results show that the mask layer is the main affect of the top stripping of the GaAs microwires in 40min. Increasing th...

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Bibliographic Details
Published inChinese physics letters Vol. 32; no. 5; pp. 150 - 152
Main Author 程滢 邹继军 万明 王炜路 彭新村 冯林 邓文娟 朱志甫
Format Journal Article
LanguageEnglish
Published 01.05.2015
Subjects
Arrays
Etching
GaAs
Gallium arsenide
Inductively coupled plasma
Masks
Photoresists
Stripping
剥离
微丝
电感耦合
砷化镓
等离子体刻蚀
阵列
顶部
Online AccessGet full text
ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/32/5/058102

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Summary:The effects of different masks and patterns on the top stripping of GaAs microwire arrays fabricated by inductively coupled plasma etching for 20min and 40min are investigated. The results show that the mask layer is the main affect of the top stripping of the GaAs microwires in 40min. Increasing the mask layers and reducing the photoresist layers can prevent top stripping and result in a suitable GaAs microwire array.
Bibliography:11-1959/O4
The effects of different masks and patterns on the top stripping of GaAs microwire arrays fabricated by inductively coupled plasma etching for 20min and 40min are investigated. The results show that the mask layer is the main affect of the top stripping of the GaAs microwires in 40min. Increasing the mask layers and reducing the photoresist layers can prevent top stripping and result in a suitable GaAs microwire array.
CHENG Ying, ZOU Ji-Jun, WAN Ming, WANG Wei-Lu, PENG Xm-Cun, FENG Lin, DENG Wen-Juan, ZHU Zhi-Fu（ Engineering Research Center of New Energy Technology and Equipment of Jiangxi Province, East China Institute of Technology, Nanchang 330013）
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/5/058102