郝跃, 张. 赵. 侯. 王. 郑. 马. 张. (2015). Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors. Chinese physics B, 24(3), 332-335. https://doi.org/10.1088/1674-1056/24/3/037304
Chicago Style (17th ed.) Citation郝跃, 张鹏 赵胜雷 侯斌 王冲 郑雪峰 马晓华 张进成. "Improvement of the Off-state Breakdown Voltage with Field Plate and Low-density Drain in AlGaN/GaN High-electron Mobility Transistors." Chinese Physics B 24, no. 3 (2015): 332-335. https://doi.org/10.1088/1674-1056/24/3/037304.
MLA (9th ed.) Citation郝跃, 张鹏 赵胜雷 侯斌 王冲 郑雪峰 马晓华 张进成. "Improvement of the Off-state Breakdown Voltage with Field Plate and Low-density Drain in AlGaN/GaN High-electron Mobility Transistors." Chinese Physics B, vol. 24, no. 3, 2015, pp. 332-335, https://doi.org/10.1088/1674-1056/24/3/037304.