Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors

We present an AlGaN/GaN high-electron mobility transistor（HEMT） device with both field plate（FP） and lowdensity drain（LDD）. The LDD is realized by the injection of negatively charged fluorine（F-） ions under low power in the space between the gate and the drain electrodes. With a small-size FP and a...

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Published inChinese physics B Vol. 24; no. 3; pp. 332 - 335
Main Author 张鹏 赵胜雷 侯斌 王冲 郑雪峰 马晓华 张进成 郝跃
Format Journal Article
LanguageEnglish
Published 01.03.2015
Subjects
AlGaN
Aluminum gallium nitrides
Devices
Drains
Electric potential
Filled plastics
Gallium nitrides
HEMT
LDD
Semiconductor devices
Transistors
Voltage
低密度
击穿电压
场板
状态
高电子迁移率晶体管
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/24/3/037304

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Summary:We present an AlGaN/GaN high-electron mobility transistor（HEMT） device with both field plate（FP） and lowdensity drain（LDD）. The LDD is realized by the injection of negatively charged fluorine（F-） ions under low power in the space between the gate and the drain electrodes. With a small-size FP and a LDD length equal to only 31% of the gate-drain spacing, the device effectively modifies the electric field distribution and achieves a breakdown voltage enhancement up to two times when compared with a device with only FP.
Bibliography:GaN,high-electron mobility transistors,fluorine,electric field
We present an AlGaN/GaN high-electron mobility transistor（HEMT） device with both field plate（FP） and lowdensity drain（LDD）. The LDD is realized by the injection of negatively charged fluorine（F-） ions under low power in the space between the gate and the drain electrodes. With a small-size FP and a LDD length equal to only 31% of the gate-drain spacing, the device effectively modifies the electric field distribution and achieves a breakdown voltage enhancement up to two times when compared with a device with only FP.
11-5639/O4
Zhang Peng, Zhao Sheng-Lei, Hou Bin, Wang Chong, Zheng Xue-Feng, Ma Xiao-Hua, Zhang Jin-Cheng, and Hao Yue（ Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Advanced Materials and Nanotechnology, Xidian University, Xi＇ an 710071, China）
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/3/037304