陈彩云, 黄. 李. 陈. 王. 谢. 林. 邵. 聂. (2016). Properties of n-Ge epilayer on Si substrate with in-situ doping technology. Chinese physics B, 25(6), 355-359. https://doi.org/10.1088/1674-1056/25/6/066601
Chicago Style (17th ed.) Citation陈彩云, 黄诗浩 李成 陈城钊 王尘 谢文明 林抒毅 邵明 聂明星. "Properties of N-Ge Epilayer on Si Substrate with In-situ Doping Technology." Chinese Physics B 25, no. 6 (2016): 355-359. https://doi.org/10.1088/1674-1056/25/6/066601.
MLA (9th ed.) Citation陈彩云, 黄诗浩 李成 陈城钊 王尘 谢文明 林抒毅 邵明 聂明星. "Properties of N-Ge Epilayer on Si Substrate with In-situ Doping Technology." Chinese Physics B, vol. 25, no. 6, 2016, pp. 355-359, https://doi.org/10.1088/1674-1056/25/6/066601.
Warning: These citations may not always be 100% accurate.