Properties of n-Ge epilayer on Si substrate with in-situ doping technology

The properties of n-Ge epilayer deposited on Si substrate with in-situ doping technology in a cold-wall ultrahigh vacuum chemical vapor deposition（UHVCVD） system are investigated.The growth temperature of 500℃ is optimal for the n-Ge growth in our equipment with a phosphorus concentration of 1018cm-...

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Published inChinese physics B Vol. 25; no. 6; pp. 355 - 359
Main Author 黄诗浩 李成 陈城钊 王尘 谢文明 林抒毅 邵明 聂明星 陈彩云
Format Journal Article
LanguageEnglish
Published 01.06.2016
Subjects
Diffraction
Doping
Doppler effect
n-Ge
Optimization
Phosphorus
Photoluminescence
Silicon substrates
Si衬底
Spontaneous emission
UHVCVD
X射线衍射测量
原位掺杂
外延层
技术性能
超高真空化学气相沉积
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/25/6/066601

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Summary:The properties of n-Ge epilayer deposited on Si substrate with in-situ doping technology in a cold-wall ultrahigh vacuum chemical vapor deposition（UHVCVD） system are investigated.The growth temperature of 500℃ is optimal for the n-Ge growth in our equipment with a phosphorus concentration of 1018cm-3.In the n-Ge epilayer,the depth profile of phosphorus concentration is box-shaped and the tensile strain of 0.12% confirmed by x-ray diffraction measurement is introduced which results in the red shift of the photoluminescence.The enhancements of photoluminescence intensity with the increase of the doping concentration are observed,which is consistent with the modeling of the spontaneous emission spectrum for direct transition of Ge.The results are of significance for guiding the growth of n-Ge epilayer with in-situ doping technology.
Bibliography:Shi-Hao Huang,Cheng Li,Cheng-Zhao Chen,Chen Wang,Wen-Ming Xie,Shu-Yi Lin,Ming Shao,Ming-Xing Nie,Cai-Yun Chen
in-situ doping technology;germanium;epitaxial growth
The properties of n-Ge epilayer deposited on Si substrate with in-situ doping technology in a cold-wall ultrahigh vacuum chemical vapor deposition（UHVCVD） system are investigated.The growth temperature of 500℃ is optimal for the n-Ge growth in our equipment with a phosphorus concentration of 1018cm-3.In the n-Ge epilayer,the depth profile of phosphorus concentration is box-shaped and the tensile strain of 0.12% confirmed by x-ray diffraction measurement is introduced which results in the red shift of the photoluminescence.The enhancements of photoluminescence intensity with the increase of the doping concentration are observed,which is consistent with the modeling of the spontaneous emission spectrum for direct transition of Ge.The results are of significance for guiding the growth of n-Ge epilayer with in-situ doping technology.
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/25/6/066601