赵志飞, 黄. 陶. 柏. 陈. 汪. 刘. 卫. 李. (2015). Design and fabrication of a 3.3 kV 4H-SiC MOSFET. Journal of semiconductors, 36(9), 54-57. https://doi.org/10.1088/1674-4926/36/9/094002
Chicago Style (17th ed.) Citation赵志飞, 黄润华 陶永洪 柏松 陈刚 汪玲 刘奥 卫能 李赟. "Design and Fabrication of a 3.3 KV 4H-SiC MOSFET." Journal of Semiconductors 36, no. 9 (2015): 54-57. https://doi.org/10.1088/1674-4926/36/9/094002.
MLA (9th ed.) Citation赵志飞, 黄润华 陶永洪 柏松 陈刚 汪玲 刘奥 卫能 李赟. "Design and Fabrication of a 3.3 KV 4H-SiC MOSFET." Journal of Semiconductors, vol. 36, no. 9, 2015, pp. 54-57, https://doi.org/10.1088/1674-4926/36/9/094002.
Warning: These citations may not always be 100% accurate.