Design and fabrication of a 3.3 kV 4H-SiC MOSFET

A 4H-SiC MOSFET with breakdown voltage higher than 3300 V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of the drift layer and DMOSFET cell structure of active area. The n-type epilayer is 33μm thick with a doping of 2.5 × 10^15 c...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductors Vol. 36; no. 9; pp. 54 - 57
Main Author 黄润华 陶永洪 柏松 陈刚 汪玲 刘奥 卫能 李赟 赵志飞
Format Journal Article
LanguageEnglish
Published 01.09.2015
Subjects
4H-SiC
Breakdown
Drains
Electric potential
Guards
Mathematical models
MOSFET
MOSFETs
Semiconductors
T细胞
Voltage
击穿电压
数值模拟
漏极电流
结构参数
设计制作
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/36/9/094002

Cover

More Information
Summary:A 4H-SiC MOSFET with breakdown voltage higher than 3300 V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of the drift layer and DMOSFET cell structure of active area. The n-type epilayer is 33μm thick with a doping of 2.5 × 10^15 cm-3. The devices were fabricated with a floating guard ring edge termination. The drain current 1d= 5 A at Vg = 20 V, corresponding to vd = 2.5 v.
Bibliography:11-5781/TN
4H-SiC; MOSFET; interface state
A 4H-SiC MOSFET with breakdown voltage higher than 3300 V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of the drift layer and DMOSFET cell structure of active area. The n-type epilayer is 33μm thick with a doping of 2.5 × 10^15 cm-3. The devices were fabricated with a floating guard ring edge termination. The drain current 1d= 5 A at Vg = 20 V, corresponding to vd = 2.5 v.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/36/9/094002