Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride （A1N） thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC （0001） substrate at 1100℃ by metal organic chemical vapor...

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Published inChinese physics B Vol. 24; no. 5; pp. 587 - 591
Main Author 侍铭 陈平 赵德刚 江德生 郑军 成步文 朱建军 刘宗顺 刘炜 李翔 赵丹梅 王启明 刘建平 张书明 杨辉
Format Journal Article
LanguageEnglish
Published 01.05.2015
Subjects
6H-SiC
AlN薄膜
Aluminum nitride
Cold cathodes
Current density
Electric fields
Field emission
Silicon carbide
Si掺杂
Thin films
Volt-ampere characteristics
场发射特性
导通电压
微尺度
金属有机化学气相沉积
阴极结构
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/24/5/057901

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Summary:The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride （A1N） thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC （0001） substrate at 1100℃ by metal organic chemical vapor deposition （MOCVD） under low pressure. The I-V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I-V and Fowler-Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/μm and the maximum emission current density is 154 mA/cm2 at 69.3 V for the Si- doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission.
Bibliography:The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride （A1N） thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC （0001） substrate at 1100℃ by metal organic chemical vapor deposition （MOCVD） under low pressure. The I-V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I-V and Fowler-Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/μm and the maximum emission current density is 154 mA/cm2 at 69.3 V for the Si- doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission.
11-5639/O4
AlN, field emission, cold cathode, negative electron affinity
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/5/057901