Application of stratified implantation for silicon micro-strip detectors

In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of...

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Bibliographic Details
Published inChinese physics C Vol. 39; no. 6; pp. 85 - 88
Main Author 李海霞 李占奎 王方聪 李荣华 陈翠红 王秀华 戎欣娟 刘凤琼 王柱生 李春艳 祖凯玲 卢子伟
Format Journal Article
LanguageEnglish
Published 01.06.2015
Subjects
Detectors
Implantation
Nuclear radiation
P-n junctions
PN结
Shadows
Silicon
Strip
Wafers
应用
条带
检测器
植入
注入工艺
硅微条探测器
阴影效应
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ISSN1674-1137
0254-3052
DOI10.1088/1674-1137/39/6/066005

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Summary:In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P＋ region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements.
Bibliography:nuclear radiation detectors, stratified implantation, P-N junction, reverse body resistance
In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P＋ region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements.
11-5641/O4
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SourceType-Scholarly Journals-1
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ISSN:1674-1137
0254-3052
DOI:10.1088/1674-1137/39/6/066005