Ultralow Specific on-Resistance Trench MOSFET with a U-Shaped Extended Gate

An ultralow specific on-resistance （Ron,sp） trench metal-oxide-semiconductor field effect transistor （MOSFET） with an improved off-state breakdown voltage （BV） is proposed. It features a U-shaped gate around the drift region and an oxide trench inserted in the drift region （UG MOSFET）. In the on-sta...

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Published inChinese physics letters Vol. 32; no. 6; pp. 188 - 191
Main Author 王卓 李鹏程 张波 范远航 徐青 罗小蓉
Format Journal Article
LanguageEnglish
Published 01.06.2015
Subjects
Drains
Drift
Gates
MOSFET
MOSFETs
Oxides
Semiconductor devices
Trenches
Voltage
低导通电阻
击穿电压
掺杂浓度
沟槽
漂移区
金属氧化物半导体场效应晶体管
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/32/6/068501

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Summary:An ultralow specific on-resistance （Ron,sp） trench metal-oxide-semiconductor field effect transistor （MOSFET） with an improved off-state breakdown voltage （BV） is proposed. It features a U-shaped gate around the drift region and an oxide trench inserted in the drift region （UG MOSFET）. In the on-state, the U-shaped gate induces a high density electron accumulation layer along its sidewall, which provides a low-resistance current path from the source to the drain, realizing an ultralow Ron,sp. The value of Ron,sp is almost independent of the drift doping concentration, and thus the UG MOSFET breaks through the contradiction relationship between R p and the off-state BV. Moreover, the oxide trench folds the drift region, enabling the UG MOSFET to support a high BV with a shortened cell pitch. The UG MOSFET achieves an Ron,sp of 2 mΩ·cm^2 and an improved BV of 216 V, superior to the best existing state-of-the-art transistors at the same BV level
Bibliography:11-1959/O4
An ultralow specific on-resistance （Ron,sp） trench metal-oxide-semiconductor field effect transistor （MOSFET） with an improved off-state breakdown voltage （BV） is proposed. It features a U-shaped gate around the drift region and an oxide trench inserted in the drift region （UG MOSFET）. In the on-state, the U-shaped gate induces a high density electron accumulation layer along its sidewall, which provides a low-resistance current path from the source to the drain, realizing an ultralow Ron,sp. The value of Ron,sp is almost independent of the drift doping concentration, and thus the UG MOSFET breaks through the contradiction relationship between R p and the off-state BV. Moreover, the oxide trench folds the drift region, enabling the UG MOSFET to support a high BV with a shortened cell pitch. The UG MOSFET achieves an Ron,sp of 2 mΩ·cm^2 and an improved BV of 216 V, superior to the best existing state-of-the-art transistors at the same BV level
WANG Zhuo, LI Peng-Cheng, ZHANG Bo, FAN Yuan-Hang, XU Qing, LUO Xiao-Rong（ State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054）
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/6/068501