Effect of Pt diffusion barrier layer in Ni/AuGe/Pt/Au on ohmic contact to n-GaAs

The multi-layer metals of Ni/AuGe/Pt/Au with a Pt diffusion barrier layer of ohmic contact to n-GaAs were studied. The surface morphology and ohmic contact resistivity of multi-layer metals were characterized, with and without the Pt diffusion barrier layer for comparison. The SEM and EDS measuremen...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductors Vol. 36; no. 3; pp. 141 - 143
Main Author 王勇 刘丹丹 冯国庆 叶镇 高占琦 王晓华
Format Journal Article
LanguageEnglish
Published 01.03.2015
Subjects
Contact resistance
Diffusion barriers
Gold
Morphology
Multilayers
Nickel
Platinum
Semiconductors
多层金属
扩散阻挡层
欧姆接触电阻
表面形态
金属带
铂
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/36/3/036002

Cover

Abstract The multi-layer metals of Ni/AuGe/Pt/Au with a Pt diffusion barrier layer of ohmic contact to n-GaAs were studied. The surface morphology and ohmic contact resistivity of multi-layer metals were characterized, with and without the Pt diffusion barrier layer for comparison. The SEM and EDS measurements show the Pt diffusion barrier layer can block the interdiffusion of atoms in multi-layer metals, and improve the surface morphology. The TLM results show that the samples with a Pt diffusion barrier layer have uniform ohmic contact resistance, indicating that the Pt diffusion barrier layer can increase the repetition and uniformity of ohmic contact to n-GaAs, and improve the thermal stability and reliability of GaAs-based devices.
AbstractList The multi-layer metals of Ni/AuGe/Pt/Au with a Pt diffusion barrier layer of ohmic contact to n-GaAs were studied. The surface morphology and ohmic contact resistivity of multi-layer metals were characterized, with and without the Pt diffusion barrier layer for comparison. The SEM and EDS measurements show the Pt diffusion barrier layer can block the interdiffusion of atoms in multi-layer metals, and improve the surface morphology. The TLM results show that the samples with a Pt diffusion barrier layer have uniform ohmic contact resistance, indicating that the Pt diffusion barrier layer can increase the repetition and uniformity of ohmic contact to n-GaAs, and improve the thermal stability and reliability of GaAs-based devices.
Author 王勇 刘丹丹 冯国庆 叶镇 高占琦 王晓华
AuthorAffiliation National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun130022, China
Author_xml – sequence: 1
  fullname: 王勇 刘丹丹 冯国庆 叶镇 高占琦 王晓华
BookMark eNqFkE9rAjEQxXOwULX9CIXQUy_bnWz2Lz2JWFuQ1kN7Dtlsoilrokn24LdvRPHQS2GYYYb3G3hvgkbGGonQA4FnAnWdkrLKk7zJypTGSoGWANkIja_3WzTx_gcg7jkZo_VCKSkCtgqvA-60UoPX1uCWO6elwz0_xq4N_tDpbFjKdB3ixFFhtzstsLAm8MgHi02y5DN_h24U7728v8wp-n5dfM3fktXn8n0-WyWCEhoSTqloFW0qRTKh2lKpvCmbOpeF4LKTFQVJAZQsWsIz4CUtVFXkVVFUXUeKjtApejr_3Tt7GKQPbKe9kH3PjbSDZ6QGyCuAponSl7NUOOu9k4oJHXiINoPjumcE2Ck7dsqInTJiNBY7Zxfp4g-9d3rH3fFf7vHCba3ZHLTZXMGyzCGapUB_AeNTgBk
CitedBy_id crossref_primary_10_1007_s11664_016_4432_6
crossref_primary_10_1063_9_0000692
crossref_primary_10_1088_1361_6641_32_4_045006
crossref_primary_10_1149_2_0091901jss
Cites_doi 10.1063/1.327387
10.1016/0038-1101(67)90037-8
10.3788/CJL201239.0102010
10.1016/0040-6090(83)90581-3
10.1016/0038-1098(84)90571-4
10.1017/hpl.2013.22
10.1149/1.2096412
10.1016/0038-1101(87)90112-2
10.1364/PRJ.1.000052
10.1017/hpl.2013.6
10.3788/COL20090710.0956
ContentType Journal Article
DBID 2RA
92L
CQIGP
W92
~WA
AAYXX
CITATION
7SP
7U5
8FD
L7M
DOI 10.1088/1674-4926/36/3/036002
DatabaseName 维普期刊资源整合服务平台
中文科技期刊数据库-CALIS站点
维普中文期刊数据库
中文科技期刊数据库-工程技术
中文科技期刊数据库- 镜像站点
CrossRef
Electronics & Communications Abstracts
Solid State and Superconductivity Abstracts
Technology Research Database
Advanced Technologies Database with Aerospace
DatabaseTitle CrossRef
Solid State and Superconductivity Abstracts
Technology Research Database
Advanced Technologies Database with Aerospace
Electronics & Communications Abstracts
DatabaseTitleList Solid State and Superconductivity Abstracts
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Physics
DocumentTitleAlternate Effect of Pt diffusion barrier layer in Ni/AuGe/Pt/Au on ohmic contact to n-GaAs
EndPage 143
ExternalDocumentID 10_1088_1674_4926_36_3_036002
664069830
GroupedDBID 02O
042
1WK
2B.
2C0
2RA
4.4
5B3
5VR
5VS
7.M
92H
92I
92L
92R
93N
AAGCD
AAJIO
AALHV
AATNI
ABHWH
ACAFW
ACGFO
ACGFS
ACHIP
AEFHF
AFUIB
AFYNE
AHSEE
AKPSB
ALMA_UNASSIGNED_HOLDINGS
ASPBG
AVWKF
AZFZN
BBWZM
CCEZO
CEBXE
CHBEP
CJUJL
CQIGP
CRLBU
CUBFJ
CW9
EBS
EDWGO
EJD
EQZZN
FA0
IJHAN
IOP
IZVLO
JCGBZ
KNG
KOT
M45
N5L
NS0
NT-
NT.
PJBAE
Q02
RIN
RNS
ROL
RPA
RW3
SY9
TCJ
TGT
W28
W92
~WA
-SI
-S~
5XA
5XJ
AAYXX
ACARI
AERVB
AGQPQ
AOAED
ARNYC
CAJEI
CITATION
Q--
TGMPQ
U1G
U5S
7SP
7U5
8FD
AEINN
L7M
ID FETCH-LOGICAL-c313t-a33cbf397f12cfb6ff496984e5caede730e300fe5b1a20a635f7547557dd15d13
ISSN 1674-4926
IngestDate Fri Sep 05 09:16:06 EDT 2025
Tue Jul 01 03:20:30 EDT 2025
Thu Apr 24 22:54:17 EDT 2025
Wed Feb 14 10:30:41 EST 2024
IsPeerReviewed true
IsScholarly true
Issue 3
Language English
License http://iopscience.iop.org/info/page/text-and-data-mining
http://iopscience.iop.org/page/copyright
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-c313t-a33cbf397f12cfb6ff496984e5caede730e300fe5b1a20a635f7547557dd15d13
Notes GaAs; ohmic contact; diffusion barrier layer
11-5781/TN
The multi-layer metals of Ni/AuGe/Pt/Au with a Pt diffusion barrier layer of ohmic contact to n-GaAs were studied. The surface morphology and ohmic contact resistivity of multi-layer metals were characterized, with and without the Pt diffusion barrier layer for comparison. The SEM and EDS measurements show the Pt diffusion barrier layer can block the interdiffusion of atoms in multi-layer metals, and improve the surface morphology. The TLM results show that the samples with a Pt diffusion barrier layer have uniform ohmic contact resistance, indicating that the Pt diffusion barrier layer can increase the repetition and uniformity of ohmic contact to n-GaAs, and improve the thermal stability and reliability of GaAs-based devices.
Wang Yong, Liu Dandan, Feng Guoqing, Ye Zhen, Gao Zhanqi, Wang Xiaohua
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
PQID 1800470099
PQPubID 23500
PageCount 3
ParticipantIDs proquest_miscellaneous_1800470099
crossref_citationtrail_10_1088_1674_4926_36_3_036002
crossref_primary_10_1088_1674_4926_36_3_036002
chongqing_primary_664069830
ProviderPackageCode CITATION
AAYXX
PublicationCentury 2000
PublicationDate 2015-03-01
PublicationDateYYYYMMDD 2015-03-01
PublicationDate_xml – month: 03
  year: 2015
  text: 2015-03-01
  day: 01
PublicationDecade 2010
PublicationTitle Journal of semiconductors
PublicationTitleAlternate Chinese Journal of Semiconductors
PublicationYear 2015
References 11
12
Zhang W R (16) 2000; 21
13
Chen T S (15) 1994; 14
Liu F Y (1) 2000; 10
17
Koop E J (14) 2013; 28
Ge J H (2) 2003; 1
Wang Y H (19)
3
4
Yang L J (18) 2007; 27
5
6
8
9
Cao S S (7) 2000; 24
10
References_xml – ident: 10
  doi: 10.1063/1.327387
– volume: 14
  start-page: 255
  year: 1994
  ident: 15
  publication-title: Research and Progress of SSE
– volume: 28
  issn: 0268-1242
  year: 2013
  ident: 14
  publication-title: Semicond Sci Technol
– volume: 21
  start-page: 608
  issn: 0899-9988
  year: 2000
  ident: 16
  publication-title: Chinese Journal of Semiconductors
– volume: 1
  start-page: 334
  year: 2003
  ident: 2
  publication-title: Chinese Optics Letters
– ident: 9
  doi: 10.1016/0038-1101(67)90037-8
– ident: 6
  doi: 10.3788/CJL201239.0102010
– ident: 12
  doi: 10.1016/0040-6090(83)90581-3
– ident: 11
  doi: 10.1016/0038-1098(84)90571-4
– ident: 4
  doi: 10.1017/hpl.2013.22
– volume: 24
  start-page: 203
  year: 2000
  ident: 7
  publication-title: Laser Technology
– ident: 17
  doi: 10.1149/1.2096412
– volume: 27
  start-page: 427
  year: 2007
  ident: 18
  publication-title: Research and Progress of SSE
– start-page: 61
  ident: 19
  publication-title: International Conference on Optoelectronics and Microelectronics (ICOM)
– volume: 10
  start-page: 56
  issn: 1009-7104
  year: 2000
  ident: 1
  publication-title: Physics and Engineering
– ident: 13
  doi: 10.1016/0038-1101(87)90112-2
– ident: 3
  doi: 10.1364/PRJ.1.000052
– ident: 5
  doi: 10.1017/hpl.2013.6
– ident: 8
  doi: 10.3788/COL20090710.0956
SSID ssj0067441
Score 1.9652927
Snippet The multi-layer metals of Ni/AuGe/Pt/Au with a Pt diffusion barrier layer of ohmic contact to n-GaAs were studied. The surface morphology and ohmic contact...
SourceID proquest
crossref
chongqing
SourceType Aggregation Database
Enrichment Source
Index Database
Publisher
StartPage 141
SubjectTerms Contact resistance
Diffusion barriers
Gold
Morphology
Multilayers
Nickel
Platinum
Semiconductors
多层金属
扩散阻挡层
欧姆接触电阻
表面形态
金属带
铂
Title Effect of Pt diffusion barrier layer in Ni/AuGe/Pt/Au on ohmic contact to n-GaAs
URI http://lib.cqvip.com/qk/94689X/201503/664069830.html
https://www.proquest.com/docview/1800470099
Volume 36
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
journalDatabaseRights – providerCode: PRVIOP
  databaseName: Institute of Physics Journals
  issn: 1674-4926
  databaseCode: IOP
  dateStart: 20090101
  customDbUrl:
  isFulltext: true
  dateEnd: 99991231
  titleUrlDefault: https://iopscience.iop.org/
  omitProxy: false
  ssIdentifier: ssj0067441
  providerName: IOP Publishing
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3di9QwEA96IuiD6Km4nkoE36TXj3y0-7iI7im49uEO755KmibswtHqbfviX-9Mmra7cn6cUNrQJlPI_DqZZr4IecNLwVN4GBirk4BzLYLMRmUwN1In1soqTjAa-fNKnpzxT-fifHIJctElbXmsf1wbV_I_XIV7wFeMkr0BZ0eicAPawF84A4fh_E889qmH0Y2tdaVOOtz7eluqK1eH7lKBPo0bGit8x6JbGrjkrWujkaBZo2M8OqtjoCQooXWwVIvtb_TVLbrRNzXmh20mE9BXv9980fglEJ17Np2PXq8m7MHEuY7Lrvm-mfpe9OaRtY9I8_sPsZgcsLzIlCkPMO3grkztk5p47LAdAcnQDnit6AZxh7sIAzVou2IzmFciGkftJ8z-ZSEb3QudYT3LCiRWILGCwVH0ZG6TO0kqJVa7-PglH1Zt6OmqnI7vH6K9siwc74UMjrAng7k41jC1OGX7Os3-ku70lNOH5IFnGF30aHlEbpn6kNzfSTt5SO46t1-9fUzyHkG0sTRv6Ygg6hFEHYLopqarTYj4CfMWrhR6OOxQjx3aNrTHzhNy9uH96buTwNfYCDSLWRsoxnRpQSm1caJtKa3lcznPuBFamcqA_DcsiqwRZaySSIF6alP4uoVIqyoWVcyekoO6qc0zQjFvUia1hT-MhAsWKV6yxCRzoSSo8dzOyNE4Y8W3PpdKISWGXmcsmhE-zGGhfXp6rJJyWfyRmzNyPA4baP5lwOuBQQVIUjSPqdo03baIM0ydir9Mz29K9Ijcmz6NF-SgverMS1BW2_KVQ9lPVQOHEQ
linkProvider IOP Publishing
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Effect+of+Pt+diffusion+barrier+layer+in+Ni%2FAuGe%2FPt%2FAu+on+ohmic+contact+to+n-GaAs&rft.jtitle=Journal+of+semiconductors&rft.au=Wang%2C+Yong&rft.au=Liu%2C+Dandan&rft.au=Feng%2C+Guoqing&rft.au=Ye%2C+Zhen&rft.date=2015-03-01&rft.issn=1674-4926&rft.volume=36&rft.issue=3&rft.spage=36002&rft_id=info:doi/10.1088%2F1674-4926%2F36%2F3%2F036002&rft.externalDBID=n%2Fa&rft.externalDocID=10_1088_1674_4926_36_3_036002
thumbnail_s http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F94689X%2F94689X.jpg