Effect of Pt diffusion barrier layer in Ni/AuGe/Pt/Au on ohmic contact to n-GaAs

The multi-layer metals of Ni/AuGe/Pt/Au with a Pt diffusion barrier layer of ohmic contact to n-GaAs were studied. The surface morphology and ohmic contact resistivity of multi-layer metals were characterized, with and without the Pt diffusion barrier layer for comparison. The SEM and EDS measuremen...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductors Vol. 36; no. 3; pp. 141 - 143
Main Author 王勇 刘丹丹 冯国庆 叶镇 高占琦 王晓华
Format Journal Article
LanguageEnglish
Published 01.03.2015
Subjects
Contact resistance
Diffusion barriers
Gold
Morphology
Multilayers
Nickel
Platinum
Semiconductors
多层金属
扩散阻挡层
欧姆接触电阻
表面形态
金属带
铂
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/36/3/036002

Cover

More Information
Summary:The multi-layer metals of Ni/AuGe/Pt/Au with a Pt diffusion barrier layer of ohmic contact to n-GaAs were studied. The surface morphology and ohmic contact resistivity of multi-layer metals were characterized, with and without the Pt diffusion barrier layer for comparison. The SEM and EDS measurements show the Pt diffusion barrier layer can block the interdiffusion of atoms in multi-layer metals, and improve the surface morphology. The TLM results show that the samples with a Pt diffusion barrier layer have uniform ohmic contact resistance, indicating that the Pt diffusion barrier layer can increase the repetition and uniformity of ohmic contact to n-GaAs, and improve the thermal stability and reliability of GaAs-based devices.
Bibliography:GaAs; ohmic contact; diffusion barrier layer
11-5781/TN
The multi-layer metals of Ni/AuGe/Pt/Au with a Pt diffusion barrier layer of ohmic contact to n-GaAs were studied. The surface morphology and ohmic contact resistivity of multi-layer metals were characterized, with and without the Pt diffusion barrier layer for comparison. The SEM and EDS measurements show the Pt diffusion barrier layer can block the interdiffusion of atoms in multi-layer metals, and improve the surface morphology. The TLM results show that the samples with a Pt diffusion barrier layer have uniform ohmic contact resistance, indicating that the Pt diffusion barrier layer can increase the repetition and uniformity of ohmic contact to n-GaAs, and improve the thermal stability and reliability of GaAs-based devices.
Wang Yong, Liu Dandan, Feng Guoqing, Ye Zhen, Gao Zhanqi, Wang Xiaohua
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/36/3/036002