Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

Deep level transient spectroscopy（DLTS） as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors（HEMTs） has been widely utilized.The DLTS measurements under different bias conditions are carried out in this paper.Two hole-like traps with active energie...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 25; no. 6; pp. 489 - 493
Main Author 朱青 马晓华 陈伟伟 侯斌 祝杰杰 张濛 陈丽香 曹艳荣 郝跃
Format Journal Article
LanguageEnglish
Published 01.06.2016
Subjects
AlGaN/GaN异质结构
Aluminum gallium nitrides
Channels
Deep level transient spectroscopy
DLTS
Electron traps
HEMT
Heterostructures
High electron mobility transistors
Semiconductor devices
Surface chemistry
偏置条件
深能级瞬态谱
电子陷阱
表面状态
高电子迁移率晶体管
Online AccessGet full text
ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/25/6/067305

Cover

More Information
Summary:Deep level transient spectroscopy（DLTS） as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors（HEMTs） has been widely utilized.The DLTS measurements under different bias conditions are carried out in this paper.Two hole-like traps with active energies of E_v ＋ 0.47 eV,and E_v ＋ 0.10 eV are observed,which are related to surface states.The electron traps with active energies of E_c-0.56 eV are located in the channel,those with E_c-0.33 eV and E_c-0.88 eV are located in the AlGaN layer.The presence of surface states has a strong influence on the detection of electron traps,especially when the electron traps are low in density.The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state.
Bibliography:Qing Zhu,Xiao-Hua Ma,Wei-Wei Chen,Bin Hou,Jie-Jie Zhu,Meng Zhang,Li-Xiang Chen,Yan-Rong Cao,Yue Hao
AlGaN/GaN;hole-like traps;DLTS;surface states
11-5639/O4
Deep level transient spectroscopy（DLTS） as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors（HEMTs） has been widely utilized.The DLTS measurements under different bias conditions are carried out in this paper.Two hole-like traps with active energies of E_v ＋ 0.47 eV,and E_v ＋ 0.10 eV are observed,which are related to surface states.The electron traps with active energies of E_c-0.56 eV are located in the channel,those with E_c-0.33 eV and E_c-0.88 eV are located in the AlGaN layer.The presence of surface states has a strong influence on the detection of electron traps,especially when the electron traps are low in density.The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/25/6/067305