姚佳飞, 张. 郭. 徐. 林. 杨. 洪. (2015). One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation. Chinese physics B, 24(2), 474-479. https://doi.org/10.1088/1674-1056/24/2/028502
Chicago Style (17th ed.) Citation姚佳飞, 张珺 郭宇锋 徐跃 林宏 杨慧 洪洋. "One-dimensional Breakdown Voltage Model of SOI RESURF Lateral Power Device Based on Lateral Linearly Graded Approximation." Chinese Physics B 24, no. 2 (2015): 474-479. https://doi.org/10.1088/1674-1056/24/2/028502.
MLA (9th ed.) Citation姚佳飞, 张珺 郭宇锋 徐跃 林宏 杨慧 洪洋. "One-dimensional Breakdown Voltage Model of SOI RESURF Lateral Power Device Based on Lateral Linearly Graded Approximation." Chinese Physics B, vol. 24, no. 2, 2015, pp. 474-479, https://doi.org/10.1088/1674-1056/24/2/028502.