One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

A novel one-dimensional（1D） analytical model is proposed for quantifying the breakdown voltage of a reduced surface field（RESURF） lateral power device fabricated on silicon on an insulator（SOI） substrate.We assume that the charges in the depletion region contribute to the lateral PN junctions along...

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Bibliographic Details
Published inChinese physics B Vol. 24; no. 2; pp. 474 - 479
Main Author 张珺 郭宇锋 徐跃 林宏 杨慧 洪洋 姚佳飞
Format Journal Article
LanguageEnglish
Published 01.02.2015
Subjects
Breakdown
Depletion
Devices
Electric potential
Electronic devices
Mathematical analysis
Mathematical models
RESURF器件
Silicon substrates
SOI
Voltage
一维模型
击穿电压
功率器件
基础
电压模型
线性
Online AccessGet full text
ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/24/2/028502

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Summary:A novel one-dimensional（1D） analytical model is proposed for quantifying the breakdown voltage of a reduced surface field（RESURF） lateral power device fabricated on silicon on an insulator（SOI） substrate.We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions.Based on the assumption,the lateral PN junction behaves as a linearly graded junction,thus resulting in a reduced surface electric field and high breakdown voltage.Using the proposed model,the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools.The analytical results are shown to be in fair agreement with the numerical results.Finally,a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters.This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device.
Bibliography:SOI, RESURE breakdown voltage, 1D model
Zhang Jun, Guo Yu-Feng, Xu Yue, Lin Hong, Yang Hui, Hong Yang, and Yao Jia-Fei（ College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China）
A novel one-dimensional（1D） analytical model is proposed for quantifying the breakdown voltage of a reduced surface field（RESURF） lateral power device fabricated on silicon on an insulator（SOI） substrate.We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions.Based on the assumption,the lateral PN junction behaves as a linearly graded junction,thus resulting in a reduced surface electric field and high breakdown voltage.Using the proposed model,the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools.The analytical results are shown to be in fair agreement with the numerical results.Finally,a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters.This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device.
11-5639/O4
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SourceType-Scholarly Journals-1
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content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/2/028502