Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode

The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICPrecessed anode was investigated for the first time. It was found that the turn-on voltage is decreased with the increase of dry-etching power. Furthermore, the leakage currents in the rev...

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Published inChinese physics B Vol. 24; no. 9; pp. 479 - 483
Main Author 钟健 姚尧 郑越 杨帆 倪毅强 贺致远 沈震 周桂林 周德秋 吴志盛 张伯君 刘扬
Format Journal Article
LanguageEnglish
Published 01.09.2015
Subjects
AlGaN/GaN
Barriers
Damage
Electric potential
Electric power generation
Gallium nitrides
Leakage current
Radio frequencies
Voltage
刻蚀损伤
射频功率
干法
电性能
肖特基二极管
肖特基势垒二极管
阳极
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/24/9/097303

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Summary:The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICPrecessed anode was investigated for the first time. It was found that the turn-on voltage is decreased with the increase of dry-etching power. Furthermore, the leakage currents in the reverse bias region above pinch-off voltage rise as radio frequency（RF） power increases, while below pinch-off voltage, leakage currents tend to be independent of RF power.Based on detailed current–voltage–temperature（I–V –T） measurements, the barrier height of thermionic-field emission（TFE） from GaN is lowered as RF power increases, which results in early conduction. The increase of leakage current can be explained by Frenkel–Poole（FP） emission that higher dry-etching damage in the sidewall leads to the higher tunneling current, while below pinch-off voltage, the leakage is only related to the AlGaN surface, which is independent of RF power.
Bibliography:The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICPrecessed anode was investigated for the first time. It was found that the turn-on voltage is decreased with the increase of dry-etching power. Furthermore, the leakage currents in the reverse bias region above pinch-off voltage rise as radio frequency（RF） power increases, while below pinch-off voltage, leakage currents tend to be independent of RF power.Based on detailed current–voltage–temperature（I–V –T） measurements, the barrier height of thermionic-field emission（TFE） from GaN is lowered as RF power increases, which results in early conduction. The increase of leakage current can be explained by Frenkel–Poole（FP） emission that higher dry-etching damage in the sidewall leads to the higher tunneling current, while below pinch-off voltage, the leakage is only related to the AlGaN surface, which is independent of RF power.
11-5639/O4
AlGaN/GaN Schottky barrier diodes,recessed anode,etching damage,tunneling
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SourceType-Scholarly Journals-1
ObjectType-Feature-2
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/9/097303