Recovery of PMOSFET NBTI under different conditions

Negative bias temperature instability（NBTI） has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery of NBTI systemically under different conditions in the P-type metal–oxide–semiconducto...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 24; no. 9; pp. 484 - 488
Main Author 曹艳荣 杨毅 曹成 何文龙 郑雪峰 马晓华 郝跃
Format Journal Article
LanguageEnglish
Published 01.09.2015
Subjects
Bias
Field effect transistors
Instability
NBTI
Niobium base alloys
Oxides
Recovery
Semiconductor devices
Stability
不稳定性
可靠性问题
器件
氧化物电荷
负偏压温度
金属氧化物半导体场效应晶体管
降解过程
Online AccessGet full text
ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/24/9/097304

Cover

More Information
Summary:Negative bias temperature instability（NBTI） has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery of NBTI systemically under different conditions in the P-type metal–oxide–semiconductor field effect transistor（PMOSFET）, explain the various recovery phenomena, and find the possible processes of the recovery.
Bibliography:negative bias temperature instability（NBTI）,P-type metal–oxide–semiconductor field effect transistor,recovery
11-5639/O4
Negative bias temperature instability（NBTI） has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery of NBTI systemically under different conditions in the P-type metal–oxide–semiconductor field effect transistor（PMOSFET）, explain the various recovery phenomena, and find the possible processes of the recovery.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/9/097304