Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers
The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, su...
Saved in:
| Published in | Chinese physics B Vol. 25; no. 2; pp. 538 - 543 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.02.2016
|
| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/25/2/028501 |
Cover
| Abstract | The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency（IQE）. The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells（QWs） enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons. |
|---|---|
| AbstractList | The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency（IQE）. The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells（QWs） enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons. The AlGaN-based deep ultraviolet light-emitting diodes (LED) with double electron blocking layers (d-EBLs) on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency (IQE). The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells (QWs) enhances the electron-hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons. |
| Author | 张诚 孙慧卿 李旭娜 孙浩 范宣聪 张柱定 郭志友 |
| AuthorAffiliation | Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China |
| Author_xml | – sequence: 1 fullname: 张诚 孙慧卿 李旭娜 孙浩 范宣聪 张柱定 郭志友 |
| BookMark | eNqFkMFuEzEQhi1UJNLCIyBZnLgsGdtr7644VRUtSBVwgLPl2OPE4LVT22nVt2ejVD30wmk0o_-b0Xzn5CzlhIS8Z_CJwTiumRr6joFUay7XfA18lMBekRUHOXZiFP0ZWT1n3pDzWv8AKAZcrEj5icXnMptkkYZ5X_I9zpgazZ5exhvzvduYio46xD09xFbMfcgRG41hu2sdzqG1kLbUheyw0ofQdtTlwyYixYi2lZzoJmb79xiK5hFLfUteexMrvnuqF-T39ZdfV1-72x83364ubzsrmGhdb2RvuPVMce7MZoLJDIP1Q2_E5Jx0bgIYvVCcedZPzi_tIGEZeFDWQi8uyMfT3uWpuwPWpudQLcZoEuZD1WwE6NXEJ7VE5SlqS661oNf7EmZTHjUDfXSsj_700Z_mUnN9crxwn19wNjTTQk6LqBD_S394onc5be8WQ89nlRpGwRdM_AO8W5Cy |
| CitedBy_id | crossref_primary_10_1080_09500340_2018_1457182 crossref_primary_10_1149_2162_8777_ad5a3b crossref_primary_10_1088_1674_1056_ac9de7 crossref_primary_10_1016_j_mssp_2018_04_020 crossref_primary_10_1109_JPHOT_2021_3088222 crossref_primary_10_1002_pssa_201700677 crossref_primary_10_1007_s10946_022_10074_x |
| Cites_doi | 10.1007/s11082-012-9636-2 10.1063/1.1899760 10.1063/1.2937247 10.1007/s11082-011-9437-z 10.1063/1.1368156 10.1109/LPT.2009.2021155 10.1109/JPHOT.2013.2271718 10.1016/j.mseb.2007.01.005 10.7498/aps.64.028501 10.1063/1.2199492 10.1109/JPHOT.2013.2278520 10.1063/1.4916268 10.7498/aps.62.247201 10.7498/aps.64.018501 10.1002/pssa.v204:1 10.1117/12.808880 10.1016/j.spmi.2014.10.003 10.1109/LED.2012.2197593 10.1109/JDT.2012.2226206 10.1063/1.4866041 |
| ContentType | Journal Article |
| DBID | 2RA 92L CQIGP ~WA AAYXX CITATION 7U5 8FD H8D L7M |
| DOI | 10.1088/1674-1056/25/2/028501 |
| DatabaseName | 维普期刊资源整合服务平台 中文科技期刊数据库-CALIS站点 维普中文期刊数据库 中文科技期刊数据库- 镜像站点 CrossRef Solid State and Superconductivity Abstracts Technology Research Database Aerospace Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Aerospace Database Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitleList | Aerospace Database |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Physics |
| DocumentTitleAlternate | Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers |
| EISSN | 2058-3834 1741-4199 |
| EndPage | 543 |
| ExternalDocumentID | 10_1088_1674_1056_25_2_028501 667832167 |
| GroupedDBID | 02O 1JI 1WK 29B 2RA 4.4 5B3 5GY 5VR 5VS 5ZH 6J9 7.M 7.Q 92L AAGCD AAJIO AAJKP AALHV AATNI ABHWH ABJNI ABQJV ACAFW ACGFS ACHIP AEFHF AENEX AFUIB AFYNE AHSEE AKPSB ALMA_UNASSIGNED_HOLDINGS ASPBG ATQHT AVWKF AZFZN BBWZM CCEZO CCVFK CEBXE CHBEP CJUJL CQIGP CRLBU CS3 DU5 EBS EDWGO EJD EMSAF EPQRW EQZZN FA0 FEDTE HAK HVGLF IJHAN IOP IZVLO JCGBZ KNG KOT M45 N5L NT- NT. PJBAE Q02 RIN RNS ROL RPA RW3 SY9 TCJ TGP UCJ W28 ~WA -SA -S~ AAYXX ACARI ADEQX AERVB AGQPQ AOAED ARNYC CAJEA CITATION Q-- U1G U5K 7U5 8FD AEINN H8D L7M |
| ID | FETCH-LOGICAL-c313t-4a54a2cf1622dab909a77cf74a39dd5dd9008f3621f149df900750f36f06cc043 |
| ISSN | 1674-1056 |
| IngestDate | Fri Sep 05 08:45:09 EDT 2025 Tue Jul 01 02:55:14 EDT 2025 Thu Apr 24 23:09:58 EDT 2025 Wed Feb 14 10:25:01 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 2 |
| Language | English |
| License | http://iopscience.iop.org/info/page/text-and-data-mining http://iopscience.iop.org/page/copyright |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c313t-4a54a2cf1622dab909a77cf74a39dd5dd9008f3621f149df900750f36f06cc043 |
| Notes | The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency（IQE）. The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells（QWs） enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons. Cheng Zhang, Hui-Qing Sunt, Xu-Na Li, Hao Sun, Xuan-Cong Fan, Zhu-Ding Zhang, and Zhi-You Guo Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China double electron blocking layers, ultraviolet light-emitting diodes, n-A1GaN, electrostatic field 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| PQID | 1800469296 |
| PQPubID | 23500 |
| PageCount | 6 |
| ParticipantIDs | proquest_miscellaneous_1800469296 crossref_primary_10_1088_1674_1056_25_2_028501 crossref_citationtrail_10_1088_1674_1056_25_2_028501 chongqing_primary_667832167 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2016-02-01 |
| PublicationDateYYYYMMDD | 2016-02-01 |
| PublicationDate_xml | – month: 02 year: 2016 text: 2016-02-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationTitle | Chinese physics B |
| PublicationTitleAlternate | Chinese Physics |
| PublicationYear | 2016 |
| References | Zhuo X J (12) 2014; 23 22 23 Ma L (6) 2014; 23 24 25 Liao Y J (4) 2014; 23 26 27 28 29 Ding B B (31) 2013; 22 Tong J H (13) 2012; 21 Yu H P (15) 2014; 31 Liu M G (11) 2015; 24 30 10 32 33 34 35 Chen Z X (7) 2014; 23 Xin L W (9) 2015; 24 14 16 17 Wang D S (21) 2014; 31 Hirayama H (19) 2010; 3 Lu T P (2) 2011; 20 3 5 Lu T P (18) 2011; 20 20 Cai J X (1) 2014; 23 Rajabi K (8) 2015; 32 |
| References_xml | – volume: 3 issn: 1882-0786 year: 2010 ident: 19 publication-title: Appl. Phys. Express – ident: 22 doi: 10.1007/s11082-012-9636-2 – ident: 16 doi: 10.1063/1.1899760 – volume: 22 issn: 1674-1056 year: 2013 ident: 31 publication-title: Chin. Phys. B – ident: 34 doi: 10.1063/1.2937247 – volume: 23 issn: 1674-1056 year: 2014 ident: 1 publication-title: Chin. Phys. B – ident: 17 doi: 10.1007/s11082-011-9437-z – volume: 20 issn: 1674-1056 year: 2011 ident: 18 publication-title: Chin. Phys. B – ident: 33 doi: 10.1063/1.1368156 – ident: 29 doi: 10.1109/LPT.2009.2021155 – ident: 24 doi: 10.1109/JPHOT.2013.2271718 – ident: 26 doi: 10.1016/j.mseb.2007.01.005 – volume: 23 issn: 1674-1056 year: 2014 ident: 6 publication-title: Chin. Phys. B – ident: 10 doi: 10.7498/aps.64.028501 – volume: 23 issn: 1674-1056 year: 2014 ident: 4 publication-title: Chin. Phys. B – ident: 14 doi: 10.1063/1.2199492 – volume: 20 issn: 1674-1056 year: 2011 ident: 2 publication-title: Chin. Phys. B – volume: 24 issn: 1674-1056 year: 2015 ident: 9 publication-title: Chin. Phys. B – volume: 24 issn: 1674-1056 year: 2015 ident: 11 publication-title: Chin. Phys. B – volume: 23 issn: 1674-1056 year: 2014 ident: 12 publication-title: Chin. Phys. B – ident: 23 doi: 10.1109/JPHOT.2013.2278520 – ident: 28 doi: 10.1063/1.4916268 – volume: 31 issn: 0256-307X year: 2014 ident: 21 publication-title: Chin. Phys. Lett. – ident: 5 doi: 10.7498/aps.62.247201 – volume: 23 issn: 1674-1056 year: 2014 ident: 7 publication-title: Chin. Phys. B – ident: 3 doi: 10.7498/aps.64.018501 – volume: 21 issn: 1674-1056 year: 2012 ident: 13 publication-title: Chin. Phys. B – ident: 27 doi: 10.1002/pssa.v204:1 – ident: 32 doi: 10.1117/12.808880 – volume: 31 issn: 0256-307X year: 2014 ident: 15 publication-title: Chin. Phys. Lett. – ident: 20 doi: 10.1016/j.spmi.2014.10.003 – volume: 32 issn: 0256-307X year: 2015 ident: 8 publication-title: Chin. Phys. Lett. – ident: 25 doi: 10.1109/LED.2012.2197593 – ident: 30 doi: 10.1109/JDT.2012.2226206 – ident: 35 doi: 10.1063/1.4866041 |
| SSID | ssj0061023 ssib054405859 ssib000804704 |
| Score | 2.1479044 |
| Snippet | The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated... The AlGaN-based deep ultraviolet light-emitting diodes (LED) with double electron blocking layers (d-EBLs) on both sides of the active region are investigated... |
| SourceID | proquest crossref chongqing |
| SourceType | Aggregation Database Enrichment Source Index Database Publisher |
| StartPage | 538 |
| SubjectTerms | AlGaN Blocking Electron sources Electrostatic fields Light-emitting diodes Quantum efficiency Quantum wells Single electrons Ultraviolet 光输出功率 内量子效率 双电子 器件性能 深紫外 紫外发光二极管 阻挡层 |
| Title | Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers |
| URI | http://lib.cqvip.com/qk/85823A/201602/667832167.html https://www.proquest.com/docview/1800469296 |
| Volume | 25 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3da9swEBdbx2AvY58s6zY02FtwY8sfsR9LaVdGSTOWQN6EbElLwLO71H7Y_vrdSfJHoLBuLyYosWx0v9ydTne_I-RTjontofC9INHKi6ROvZRJ5uVFAHAOdB7kJttikVyuoy-beDMksZvqkiY_KX7fWVfyP1KFMZArVsn-g2T7SWEAPoN84QoShuu9ZLwcZf3vTHRAdWf7p-VnsfDQRsmpVOpm2pbNXphj-GZaGvYQ9WNnk57lrpbKlbnJusVaqq47Dia2FxhNn5bil0uW74kNtqZ9pQuO3A79m_sg9NlWOcNogLPzvroOKt_aIRPIpBNsWm_RGwj41lhEUY9jEkGfxtyrUUAAKPjYkVzbMfBd8Mw5G-teW_TsMMbuVOmgBjG60M2IFSxIh8EMJUYau8ceEGkvrvnF-uqKr843q4fkEZuDW4W1ndfLkefjR_NhJxpH4Lim6NlZI54gowXu1bvHdsVfaTrrx2YsnrGZfQmk5tjW1fefsI6HLs6hhTduy-oZeer2G_TUguc5eaCqF-Tx0orsJdmPIERHEKK1piMIUYQQHUGIHkKIWghRhBC1EKIdhGgHIWoh9IqsL85XZ5eea8PhFWEQNl4k4kiwQgcJY1LkmZ-JOZJZRSLMpIylzGA1NThCgYbtttSZcUNhQPtJUfhR-JocVXWl3hCasCIWkulU-xpZkzJf-6AocibiXKhCT8hxv4r8xtKt8AT8qZDBqk9I1K0rLxyDPTZSKbnJpEhTjqLhKBrOYs64Fc2EnPS3dXP-5YaPndA4KFs8QROVqttbHqQmnsSy5O09fnNMngx_jnfkqNm36j24sE3-wYDxDzifleo |
| linkProvider | IOP Publishing |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Performance+improvement+of+AlGaN-based+deep+ultraviolet+light-emitting+diodes+with+double+electron+blocking+layers&rft.jtitle=Chinese+physics+B&rft.au=Zhang%2C+Cheng&rft.au=Hui-Qing%2C+Sun&rft.au=Li%2C+Xu-Na&rft.au=Sun%2C+Hao&rft.date=2016-02-01&rft.issn=1674-1056&rft.eissn=1741-4199&rft.volume=25&rft.issue=2&rft_id=info:doi/10.1088%2F1674-1056%2F25%2F2%2F028501&rft.externalDBID=NO_FULL_TEXT |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F85823A%2F85823A.jpg |