Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, su...

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Published inChinese physics B Vol. 25; no. 2; pp. 538 - 543
Main Author 张诚 孙慧卿 李旭娜 孙浩 范宣聪 张柱定 郭志友
Format Journal Article
LanguageEnglish
Published 01.02.2016
Subjects
AlGaN
Blocking
Electron sources
Electrostatic fields
Light-emitting diodes
Quantum efficiency
Quantum wells
Single electrons
Ultraviolet
光输出功率
内量子效率
双电子
器件性能
深紫外
紫外发光二极管
阻挡层
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/25/2/028501

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Summary:The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency（IQE）. The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells（QWs） enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.
Bibliography:The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency（IQE）. The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells（QWs） enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.
Cheng Zhang, Hui-Qing Sunt, Xu-Na Li, Hao Sun, Xuan-Cong Fan, Zhu-Ding Zhang, and Zhi-You Guo Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
double electron blocking layers, ultraviolet light-emitting diodes, n-A1GaN, electrostatic field
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/25/2/028501