Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces

An efficient interface modification is introduced to improve the performance of polymeric thin film transistors. This efficient interface modification is first achieved by 4-fluorothiophenol（4-FTP） self-assembled monolayers（SAM） to chemically treat the silver source–drain（S/D） contacts while the sil...

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Published inChinese physics B Vol. 24; no. 9; pp. 403 - 407
Main Author 谢应涛 欧阳世宏 王东平 朱大龙 许鑫 谭特 方汉铿
Format Journal Article
LanguageEnglish
Published 01.09.2015
Subjects
Contact
Dielectrics
Performance enhancement
Polymeric films
Semiconductor devices
Silver
Thin film transistors
Transistors
介电层
六甲基二硅氮烷
化学修饰
场效应迁移率
性能改进
聚合物
自组装单分子膜
薄膜晶体管
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/24/9/096803

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Summary:An efficient interface modification is introduced to improve the performance of polymeric thin film transistors. This efficient interface modification is first achieved by 4-fluorothiophenol（4-FTP） self-assembled monolayers（SAM） to chemically treat the silver source–drain（S/D） contacts while the silicon oxide（SiO2） dielectric interface is further primed by either hexamethyldisilazane（HMDS） or octyltrichlorosilane（OTS-C8）. Results show that contact resistance is the dominant factor that limits the field effect mobility of the PTDPPTFT4 transistors. With proper surface modification applied to both the dielectric surface and the bottom contacts, the field effect mobilities of the bottom-gate bottom-contact PTDPPTFT4 transistors were significantly improved from 0.15 cm^2·V^-1·s^-1 to 0.91 cm^2·V^-1·s^-1.
Bibliography:polymeric thin film transistors,orthogonal self-assembly,chemically modified gate dielectric,chemically modified silver bottom c
11-5639/O4
An efficient interface modification is introduced to improve the performance of polymeric thin film transistors. This efficient interface modification is first achieved by 4-fluorothiophenol（4-FTP） self-assembled monolayers（SAM） to chemically treat the silver source–drain（S/D） contacts while the silicon oxide（SiO2） dielectric interface is further primed by either hexamethyldisilazane（HMDS） or octyltrichlorosilane（OTS-C8）. Results show that contact resistance is the dominant factor that limits the field effect mobility of the PTDPPTFT4 transistors. With proper surface modification applied to both the dielectric surface and the bottom contacts, the field effect mobilities of the bottom-gate bottom-contact PTDPPTFT4 transistors were significantly improved from 0.15 cm^2·V^-1·s^-1 to 0.91 cm^2·V^-1·s^-1.
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/9/096803