Selected area growth integrated wavelength converter based on PD-EAM optical logic gate

A selected area growth wavelength converter based on a PD-EAM optical logic gate for WDM application is presented, integrating an EML transmitter and a SOA-PD receiver. The design, fabrication, and DC characters were analyzed. A 2 Gb/s NRZ signal based on the C-band wavelength converted to 1555 nm w...

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Published inJournal of semiconductors Vol. 35; no. 9; pp. 92 - 96
Main Author 牛斌 邱吉芳 周代兵 张灿 梁松 陆丹 赵玲娟 伍剑 王圩
Format Journal Article
LanguageEnglish
Published 01.09.2014
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ISSN1674-4926
DOI10.1088/1674-4926/35/9/094012

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Summary:A selected area growth wavelength converter based on a PD-EAM optical logic gate for WDM application is presented, integrating an EML transmitter and a SOA-PD receiver. The design, fabrication, and DC characters were analyzed. A 2 Gb/s NRZ signal based on the C-band wavelength converted to 1555 nm with the highest extinction ratio of 7 dB was achieved and wavelength converted eye diagrams with eyes opened were presented.
Bibliography:distributed feedback laser; electro absorption modulator (EAM); photo detector (PD); optical logicgate; selected area growth (SAG); semiconductor optical amplifier (SOA)
11-5781/TN
A selected area growth wavelength converter based on a PD-EAM optical logic gate for WDM application is presented, integrating an EML transmitter and a SOA-PD receiver. The design, fabrication, and DC characters were analyzed. A 2 Gb/s NRZ signal based on the C-band wavelength converted to 1555 nm with the highest extinction ratio of 7 dB was achieved and wavelength converted eye diagrams with eyes opened were presented.
Niu Bin, Qiu Jifang, Zhou Daibing, Zhang Can, Liang Song, Lu Dan, Zhao Lingjuan, Wu Jian, Wang Wei( 1.Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 2 .State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China)
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ISSN:1674-4926
DOI:10.1088/1674-4926/35/9/094012