Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films

• Published in: Chinese physics B Vol. 25; no. 2; pp. 384 - 387
• Main Author: 杨静 赵德刚 江德生 陈平 刘宗顺 朱建军 乐伶聪 李晓静 何晓光 张立群 杨辉
• Format: Journal Article
• Language: English
• Published: 01.02.2016
• Subjects: Carbon; Electrical resistivity; Flow rate; GaN薄膜; Impurities; Metal organic chemical vapor deposition; p-GaN; Reactors; 低温生长; 化学气相沉积法; 电阻率; 行为; 高温
• ISSN: 1674-1056; 2058-3834; 1741-4199
• DOI: 10.1088/1674-1056/25/2/027102

Two series of p-GaN films grown at different temperatures are obtained by metal organic chemical vapor deposition（MOCVD）. And the different variation behaviors of resistivity with growth condition for high- temperature（HT）-grown and low-temperature（LT）-grown p-GaN films are investigated. It is found that the resistivity of HT-grown p-GaN film is nearly unchanged when the NH_3 flow rate or reactor pressure increases. However, it decreases largely for LT-grown p-GaN film.These different variations may be attributed to the fact that carbon impurities are easy to incorporate into p-GaN film when the growth temperature is low. It results in a relatively high carbon concentration in LT-grown p-GaN film compared with HT-grown one. Therefore, carbon concentration is more sensitive to the growth condition in these samples, ultimately,leading to the different variation behaviors of resistivity for HT- and LT-grown ones.