Study of the dose rate effect of 180 nm nMOSFETs

Radiation induced offstate leakage in the shallow trench isolation regions of SIMC 0.18 μm nMOSFETs is studied as a function of dose rate. A ＂true＂ dose rate effect （TDRE） is observed. Increased damage is observed at low dose rate （LDR） than at high dose rate （HDR） when annealing is taken into accou...

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Published inChinese physics C Vol. 39; no. 1; pp. 65 - 69
Main Author 何宝平 姚志斌 盛江坤 王祖军 黄绍燕 刘敏波 肖志刚
Format Journal Article
LanguageEnglish
Published 2015
Subjects
Annealing
Damage
Degradation
Dosage
Leakage
Leakage current
nMOSFET
Simulation
Trenches
仿真结果
低剂量率
剂量率效应
沟槽隔离
纳米
辐射诱导
辐照实验
Online AccessGet full text
ISSN1674-1137
0254-3052
DOI10.1088/1674-1137/39/1/016004

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Abstract Radiation induced offstate leakage in the shallow trench isolation regions of SIMC 0.18 μm nMOSFETs is studied as a function of dose rate. A ＂true＂ dose rate effect （TDRE） is observed. Increased damage is observed at low dose rate （LDR） than at high dose rate （HDR） when annealing is taken into account. A new method of simulating radiation induced degradation in shallow trench isolation （STI） is presented. A comparison of radiation induced offstate leakage current in test nMOSFETs between total dose irradiation experiments and simulation results exhibits excellent agreement. The investigation results imply that the enhancement of the leakage current may be worse for the dose rate encountered in the environment of space.
AbstractList Radiation induced offstate leakage in the shallow trench isolation regions of SIMC 0.18 mu m nMOSFETs is studied as a function of dose rate. A "true" dose rate effect (TDRE) is observed. Increased damage is observed at low dose rate (LDR) than at high dose rate (HDR) when annealing is taken into account. A new method of simulating radiation induced degradation in shallow trench isolation (STI) is presented. A comparison of radiation induced offstate leakage current in test nMOSFETs between total dose irradiation experiments and simulation results exhibits excellent agreement. The investigation results imply that the enhancement of the leakage current may be worse for the dose rate encountered in the environment of space.
Radiation induced offstate leakage in the shallow trench isolation regions of SIMC 0.18 μm nMOSFETs is studied as a function of dose rate. A ＂true＂ dose rate effect （TDRE） is observed. Increased damage is observed at low dose rate （LDR） than at high dose rate （HDR） when annealing is taken into account. A new method of simulating radiation induced degradation in shallow trench isolation （STI） is presented. A comparison of radiation induced offstate leakage current in test nMOSFETs between total dose irradiation experiments and simulation results exhibits excellent agreement. The investigation results imply that the enhancement of the leakage current may be worse for the dose rate encountered in the environment of space.
Author 何宝平 姚志斌 盛江坤 王祖军 黄绍燕 刘敏波 肖志刚
AuthorAffiliation The State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology Shanxi Xi＇an 710613, China
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CitedBy_id crossref_primary_10_1007_s41365_017_0295_7
crossref_primary_10_1109_JSEN_2018_2860787
crossref_primary_10_1007_s41365_016_0110_x
crossref_primary_10_1016_j_radphyschem_2019_108433
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10.1109/TNS.2005.860709
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10.1016/0969-806X(94)90206-2
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Notes Radiation induced offstate leakage in the shallow trench isolation regions of SIMC 0.18 μm nMOSFETs is studied as a function of dose rate. A ＂true＂ dose rate effect （TDRE） is observed. Increased damage is observed at low dose rate （LDR） than at high dose rate （HDR） when annealing is taken into account. A new method of simulating radiation induced degradation in shallow trench isolation （STI） is presented. A comparison of radiation induced offstate leakage current in test nMOSFETs between total dose irradiation experiments and simulation results exhibits excellent agreement. The investigation results imply that the enhancement of the leakage current may be worse for the dose rate encountered in the environment of space.
11-5641/O4
HE Bao-Ping, YAO Zhi-Bin,SHENG Jiang-Kun,WANG Zu-Jun, HUANG Shao-Yan, LIU Min-Bo, XIAO Zhi-Gang（ The State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology Shanxi Xi＇an 710613, China）
dose rate effect, MOSFET, ELDRS, total dose
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StartPage 65
SubjectTerms Annealing
Damage
Degradation
Dosage
Leakage
Leakage current
nMOSFET
Simulation
Trenches
仿真结果
低剂量率
剂量率效应
沟槽隔离
纳米
辐射诱导
辐照实验
Title Study of the dose rate effect of 180 nm nMOSFETs
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