肖志刚, 何. 姚. 盛. 王. 黄. 刘. (2015). Study of the dose rate effect of 180 nm nMOSFETs. Chinese physics C, 39(1), 65-69. https://doi.org/10.1088/1674-1137/39/1/016004
Chicago Style (17th ed.) Citation肖志刚, 何宝平 姚志斌 盛江坤 王祖军 黄绍燕 刘敏波. "Study of the Dose Rate Effect of 180 Nm NMOSFETs." Chinese Physics C 39, no. 1 (2015): 65-69. https://doi.org/10.1088/1674-1137/39/1/016004.
MLA (9th ed.) Citation肖志刚, 何宝平 姚志斌 盛江坤 王祖军 黄绍燕 刘敏波. "Study of the Dose Rate Effect of 180 Nm NMOSFETs." Chinese Physics C, vol. 39, no. 1, 2015, pp. 65-69, https://doi.org/10.1088/1674-1137/39/1/016004.
Warning: These citations may not always be 100% accurate.