Charge recombination mechanism to explain the negative capacitance in dye-sensitized solar cells

Negative capacitance （NC） in dye-sensitized solar cells （DSCs） has been confirmed experimentally. In this work, the recombination behavior of carriers in DSC with semiconductor interface as a carder＇s transport layer is explored theoreti- cally in detail. Analytical results indicate that the recombi...

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Bibliographic Details
Published inChinese physics B Vol. 25; no. 3; pp. 366 - 370
Main Author 冯列峰 赵昆 戴海涛 王树国 孙小卫
Format Journal Article
LanguageEnglish
Published 01.03.2016
Subjects
Capacitance
Direct current
DSC
Electric potential
Mathematical analysis
Perturbation methods
Semiconductors
Solar cells
Voltage
偏置电压
半导体界面
染料敏化太阳能电池
电荷
等效电路
负电容
重组机制
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/25/3/037307

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Summary:Negative capacitance （NC） in dye-sensitized solar cells （DSCs） has been confirmed experimentally. In this work, the recombination behavior of carriers in DSC with semiconductor interface as a carder＇s transport layer is explored theoreti- cally in detail. Analytical results indicate that the recombination behavior of carriers could contribute to the NC of DSCs under small signal perturbation. Using this recombination capacitance we propose a novel equivalent circuit to completely explain the negative terminal capacitance. Further analysis based on the recombination complex impedance show that the NC is inversely proportional to frequency. In addition, analytical recombination resistance is composed by the alternating current （AC） recombination resistance （Rrac） and the direct current （DC） recombination resistance （Rrdc）, which are caused by small-signal perturbation and the DC bias voltage, respectively. Both of two parts will decrease with increasing bias voltage.
Bibliography:dye-sensitized solar-cells （DSCs）, negative capacitance （NC）, small-signal perturbation, carrier＇stransport
11-5639/O4
Negative capacitance （NC） in dye-sensitized solar cells （DSCs） has been confirmed experimentally. In this work, the recombination behavior of carriers in DSC with semiconductor interface as a carder＇s transport layer is explored theoreti- cally in detail. Analytical results indicate that the recombination behavior of carriers could contribute to the NC of DSCs under small signal perturbation. Using this recombination capacitance we propose a novel equivalent circuit to completely explain the negative terminal capacitance. Further analysis based on the recombination complex impedance show that the NC is inversely proportional to frequency. In addition, analytical recombination resistance is composed by the alternating current （AC） recombination resistance （Rrac） and the direct current （DC） recombination resistance （Rrdc）, which are caused by small-signal perturbation and the DC bias voltage, respectively. Both of two parts will decrease with increasing bias voltage.
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/25/3/037307