Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst

Graphene on gallium nitride （GaN） will be quite useful when the graphene is used as transparent electrodes to improve the performance of gallium nitride devices. In this work, we report the direct synthesis of graphene on GaN without an extra catalyst by chemical vapor deposition. Raman spectra indi...

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Published inChinese physics B Vol. 23; no. 9; pp. 358 - 363
Main Author 赵云 王钢 杨怀超 安铁雷 陈闽江 余芳 陶立 羊建坤 魏同波 段瑞飞 孙连峰
Format Journal Article
LanguageEnglish
Published 01.09.2014
Subjects
Catalysts
Chemical vapor deposition
Electrical resistivity
Electrodes
Gallium nitrides
Graphene
Nitrides
Optimization
Spectra
X射线衍射光谱
催化剂
光致发光光谱
化学气相沉积
最适生长温度
氮化镓
直接生长
石墨
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/23/9/096802

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Summary:Graphene on gallium nitride （GaN） will be quite useful when the graphene is used as transparent electrodes to improve the performance of gallium nitride devices. In this work, we report the direct synthesis of graphene on GaN without an extra catalyst by chemical vapor deposition. Raman spectra indicate that the graphene films are uniform and about 5-6 layers in thickness. Meanwhile, the effects of growth temperatures on the growth of graphene films are systematically studied, of which 950 ℃ is found to be the optimum growth temperature. The sheet resistance of the grown graphene is 41.1 Ω/square, which is close to the lowest sheet resistance of transferred graphene reported. The mechanism of graphene growth on GaN is proposed and discussed in detail. XRD spectra and photoluminescence spectra indicate that the quality of GaN epi-layers will not be affected after the growth of graphene.
Bibliography:Graphene on gallium nitride （GaN） will be quite useful when the graphene is used as transparent electrodes to improve the performance of gallium nitride devices. In this work, we report the direct synthesis of graphene on GaN without an extra catalyst by chemical vapor deposition. Raman spectra indicate that the graphene films are uniform and about 5-6 layers in thickness. Meanwhile, the effects of growth temperatures on the growth of graphene films are systematically studied, of which 950 ℃ is found to be the optimum growth temperature. The sheet resistance of the grown graphene is 41.1 Ω/square, which is close to the lowest sheet resistance of transferred graphene reported. The mechanism of graphene growth on GaN is proposed and discussed in detail. XRD spectra and photoluminescence spectra indicate that the quality of GaN epi-layers will not be affected after the growth of graphene.
Zhao Yun, Wang Gang, Yang Huai-Chao, An Tie-Lei, Chen Min-Jiang, Yu Fang, Tao Li, Yang Jian-Kun, Wei Tong-Bo,Duan Rui-Fei, Sun Lian-Feng（1. Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 2. National Center for Nanoscience and Technology, Beijing 1O0190, China; 3. University of Chinese Academy of Sciences, Beijing 100049, China）
11-5639/O4
graphene, photoluminescence, gallium nitride, chemical vapor deposition, Raman spectroscopy
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/9/096802