施尔畏, 周. 刘. 黄. 代. 郑. (2015). Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches. Chinese physics B, 24(4), 241-245. https://doi.org/10.1088/1674-1056/24/4/044209
Chicago Style (17th ed.) Citation施尔畏, 周天宇 刘学超 黄维 代冲冲 郑燕青. "Application of an Al-doped Zinc Oxide Subcontact Layer on Vanadium-compensated 6H-SiC Photoconductive Switches." Chinese Physics B 24, no. 4 (2015): 241-245. https://doi.org/10.1088/1674-1056/24/4/044209.
MLA (9th ed.) Citation施尔畏, 周天宇 刘学超 黄维 代冲冲 郑燕青. "Application of an Al-doped Zinc Oxide Subcontact Layer on Vanadium-compensated 6H-SiC Photoconductive Switches." Chinese Physics B, vol. 24, no. 4, 2015, pp. 241-245, https://doi.org/10.1088/1674-1056/24/4/044209.
Warning: These citations may not always be 100% accurate.