Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches

Al-doped ZnO thin film （AZO） is used as a subcontact layer in 6H-SiC photoconductive semiconductor switches （PCSSs） to reduce the on-state resistance and optimize the device structure. Our photoconductive test shows that the onstate resistance of lateral PCSS with an n＋-AZO subcontact layer is 14.7%...

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Bibliographic Details
Published inChinese physics B Vol. 24; no. 4; pp. 241 - 245
Main Author 周天宇 刘学超 黄维 代冲冲 郑燕青 施尔畏
Format Journal Article
LanguageEnglish
Published 01.04.2015
Subjects
6H-SiC
Aluminum
Al掺杂
Azo
AZO薄膜
Contact resistance
Devices
Semiconductors
Switches
Thin films
Zinc oxide
ZnO薄膜
光导开关
光电导开关
应用
氧化锌
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/24/4/044209

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Summary:Al-doped ZnO thin film （AZO） is used as a subcontact layer in 6H-SiC photoconductive semiconductor switches （PCSSs） to reduce the on-state resistance and optimize the device structure. Our photoconductive test shows that the onstate resistance of lateral PCSS with an n＋-AZO subcontact layer is 14.7% lower than that of PCSS without an n＋-AZO subcontact layer. This occurs because a heavy-doped AZO thin film can improve Ohmic contact properties, reduce contact resistance, and alleviate Joule heating. Combined with the high transparance characteristic at 532 nm of AZO film, vertical structural PCSS devices are designed and their structural superiority is discussed. This paper provides a feasible route for fabricating high performance SiC PCSS by using conductive and transparent ZnO-based materials.
Bibliography:photoconductive semiconductor switch, SiC, n＋-AZO subcontact layer, on-state resistance
Al-doped ZnO thin film （AZO） is used as a subcontact layer in 6H-SiC photoconductive semiconductor switches （PCSSs） to reduce the on-state resistance and optimize the device structure. Our photoconductive test shows that the onstate resistance of lateral PCSS with an n＋-AZO subcontact layer is 14.7% lower than that of PCSS without an n＋-AZO subcontact layer. This occurs because a heavy-doped AZO thin film can improve Ohmic contact properties, reduce contact resistance, and alleviate Joule heating. Combined with the high transparance characteristic at 532 nm of AZO film, vertical structural PCSS devices are designed and their structural superiority is discussed. This paper provides a feasible route for fabricating high performance SiC PCSS by using conductive and transparent ZnO-based materials.
11-5639/O4
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SourceType-Scholarly Journals-1
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/4/044209