王文武, 任. 杨. 唐. 徐. 罗. 唐. 徐. 许. 王. 李. 闫. 赵. 陈. 叶. (2015). Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process. Journal of semiconductors, 36(1), 86-89. https://doi.org/10.1088/1674-4926/36/1/014007
Chicago Style (17th ed.) Citation王文武, 任尚清 杨红 唐波 徐昊 罗维春 唐兆云 徐烨锋 许静 王大海 李俊峰 闫江 赵超 陈大鹏 叶甜春. "Characterization of Positive Bias Temperature Instability of NMOSFET with High-k/metal Gate Last Process." Journal of Semiconductors 36, no. 1 (2015): 86-89. https://doi.org/10.1088/1674-4926/36/1/014007.
MLA (9th ed.) Citation王文武, 任尚清 杨红 唐波 徐昊 罗维春 唐兆云 徐烨锋 许静 王大海 李俊峰 闫江 赵超 陈大鹏 叶甜春. "Characterization of Positive Bias Temperature Instability of NMOSFET with High-k/metal Gate Last Process." Journal of Semiconductors, vol. 36, no. 1, 2015, pp. 86-89, https://doi.org/10.1088/1674-4926/36/1/014007.