Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process

Positive bias temperature instability（PBTI） characteristics and degradation mechanisms of NMOSFET with high-k/metal gate last process have been systematically investigated. The time evolution of threshold voltage shift during PBTI stress still follows a power law. However, the exponent n decreases f...

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Published inJournal of semiconductors Vol. 36; no. 1; pp. 86 - 89
Main Author 任尚清 杨红 唐波 徐昊 罗维春 唐兆云 徐烨锋 许静 王大海 李俊峰 闫江 赵超 陈大鹏 叶甜春 王文武
Format Journal Article
LanguageEnglish
Published 2015
Subjects
Bias
Degradation
Gates
Instability
NMOSFET
Semiconductors
Stability
Stresses
Threshold voltage
偏压
温度
稳定特性
进程
金属栅
阈值电压漂移
降解机理
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ISSN1674-4926
DOI10.1088/1674-4926/36/1/014007

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Summary:Positive bias temperature instability（PBTI） characteristics and degradation mechanisms of NMOSFET with high-k/metal gate last process have been systematically investigated. The time evolution of threshold voltage shift during PBTI stress still follows a power law. However, the exponent n decreases from 0.26 to 0.16 linearly as the gate stress voltage increases from 0.6 to 1.2 V. There is no interface state generation during stress because of the negligible sub-threshold swing change. Moreover, the activation energy is 0.1 e V, which implies that electrons directly tunnel into high-k bulk and are trapped by pre-existing traps resulting into PBTI degradation. During recovery the threshold voltage shift is linear in lgt, and a mathematical model is proposed to express threshold voltage shift.
Bibliography:positive bias temperature instability（PBTI） high-k metal gate
Positive bias temperature instability（PBTI） characteristics and degradation mechanisms of NMOSFET with high-k/metal gate last process have been systematically investigated. The time evolution of threshold voltage shift during PBTI stress still follows a power law. However, the exponent n decreases from 0.26 to 0.16 linearly as the gate stress voltage increases from 0.6 to 1.2 V. There is no interface state generation during stress because of the negligible sub-threshold swing change. Moreover, the activation energy is 0.1 e V, which implies that electrons directly tunnel into high-k bulk and are trapped by pre-existing traps resulting into PBTI degradation. During recovery the threshold voltage shift is linear in lgt, and a mathematical model is proposed to express threshold voltage shift.
11-5781/TN
Ren Shangqing, YangHong,Tang Bo, Xu Hao, Luo Weichun, Tang Zhaoyun, Xu Yefeng, Xu Jing, Wang Dahai, Li Junfeng, Yan Jiang, Zhao Chao, Cben Dapeng,Ye Tianchun, and Wang Wenwu（ Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 10029, China）
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SourceType-Scholarly Journals-1
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ISSN:1674-4926
DOI:10.1088/1674-4926/36/1/014007