Effect of additional silicon on titanium/4H-SiC contacts properties
The Ti electrode was deposited on the （0001） face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed...
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| Published in | Chinese physics B Vol. 23; no. 5; pp. 516 - 520 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.05.2014
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/23/5/057303 |
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| Abstract | The Ti electrode was deposited on the （0001） face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property. X-ray diffraction （XRD）, X-ray photoelectron spectroscopy （XPS）, scanning electron microscopy （SEM）, and atomic force microscopy （AFM） were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti/4H-SiC contact. |
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| AbstractList | The Ti electrode was deposited on the （0001） face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property. X-ray diffraction （XRD）, X-ray photoelectron spectroscopy （XPS）, scanning electron microscopy （SEM）, and atomic force microscopy （AFM） were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti/4H-SiC contact. The Ti electrode was deposited on the (0001) face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti/4H-SiC contact. |
| Author | 张永平 陈之战 卢吴越 谈嘉慧 程越 石旺舟 |
| AuthorAffiliation | Shanghai Normal University, Shanghai 200234, China |
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| CitedBy_id | crossref_primary_10_1016_j_scriptamat_2014_11_025 crossref_primary_10_1063_1_4953778 |
| Cites_doi | 10.1016/S0040-6090(99)00681-1 10.1016/S0022-3697(03)00267-1 10.1016/S0167-9317(01)00604-9 10.1063/1.3549810 10.1063/1.3549198 10.1109/EDL.1982.25502 10.1007/s11664-004-0203-x 10.1016/S0038-1101(01)00327-6 10.1063/1.323539 10.1063/1.358463 10.1088/0268-1242/10/12/015 10.1063/1.4737018 10.1063/1.3597413 10.1016/j.apsusc.2007.06.022 10.1088/1009-1963/15/9/039 10.1016/j.jallcom.2012.09.071 10.1063/1.118586 10.1016/S1359-6454(99)00151-2 10.1103/PhysRevB.34.2311 10.1103/PhysRevB.80.245303 10.1088/0022-3727/44/25/255302 10.1088/1009-1963/16/6/046 10.1002/pssb.201046175 10.1063/1.3155195 10.1016/S0169-4332(02)01195-9 10.1016/j.tsf.2006.06.015 10.1063/1.119831 10.1016/j.apsusc.2008.08.112 10.1016/S0921-5107(96)02005-3 10.1063/1.109257 10.1063/1.1579845 10.1063/1.1289057 |
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| Notes | Ti/4H-SiC, ohmic contact, surface morphology, additional silicon Zhang Yong-Ping, Chen Zhi-Zhan, Lu Wu-Yue , Tan Jia-Hui, Cheng Yue, Shi Wang-Zhou（ Shanghai Normal University, Shanghai 200234, China） The Ti electrode was deposited on the （0001） face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property. X-ray diffraction （XRD）, X-ray photoelectron spectroscopy （XPS）, scanning electron microscopy （SEM）, and atomic force microscopy （AFM） were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti/4H-SiC contact. 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| Snippet | The Ti electrode was deposited on the （0001） face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during... The Ti electrode was deposited on the (0001) face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during... |
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| SubjectTerms | 4H-SiC Annealing Atomic force microscopy Electrodes Scanning electron microscopy Silicon Titanium Trays X-rays X-射线光电子能谱 X-射线衍射 原子力显微镜 扫描电子显微镜 接触特性 欧姆接触 硅 |
| Title | Effect of additional silicon on titanium/4H-SiC contacts properties |
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